相关论文: Impact of Quantum Well Thickness on Efficiency Los…

InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by…

In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best…

Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively…

Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional…

In this work we present a detailed analysis of the interplay of Coulomb effects and different mechanisms that can lead to carrier localization effects in c-plane InGaN/GaN quantum wells. As mechanisms for carrier localization we consider…

We study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells (QWs) were experimentally…

Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in…

There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission…

The accurate determination of the compositional fluctuations is pivotal in understanding their role in the reduction of efficiency in high indium content $In_{x}Ga_{1-x}N$ light-emitting diodes, the origin of which is still poorly…

Low internal and external quantum efficiencies in high Aluminium content AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED) occurred due to strong polarization effects, spontaneous and piezoelectric polarization, at the interface…

We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field…

We report on unique features of ultra-thin GaN/AlN quantum wells and demonstrate a new field emission device for human-safe disinfection with an external quantum efficiency of 18% and superior reliability, as compared to far-UVC LEDs. We…

We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common…

Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures…

The enhancement of power conversion efficiency beyond the theoretical limit of single-junction solar cells is a key objective in the advancement of hot carrier solar cells. Recent findings indicate that quantum wells (QWs) can effectively…

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier…

Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a…

We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of…