相关论文: Superlative spin transport of holes in ultra-thin …
Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron…
In anisotropic crystals, the direction-dependent effective mass of carriers can have a profound impact on spin transport dynamics. The puckered crystal structure of black phosphorus (BP) leads to direction-dependent charge transport and…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…
Semiconductor hole-spin qubits offer a promising route to quantum computation due to their weak hyperfine interaction, and strong intrinsic spin-orbit coupling enabling electric control of qubits. Scalable architectures, however, require…
We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall…
The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals,…
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been…
The influence of carrier type on superconductivity has been an important issue for understanding both conventional and unconventional superconductors [1-7]. For elements that superconduct, it is known that hole-carriers govern the…
Anisotropy describes the directional dependence of a material's properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure, and thus not tunable by the…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plagues spin injection in semiconductors with ferromagnetic ohmic contacts. Through the spin-dependent mean-free-path, it…
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak…
The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices…
Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and…
We consider the spin-orbit-induced spin Hall effect and spin swapping in diffusive superconductors. By employing the non-equilibrium Keldysh Green's function technique in the quasiclassical approximation, we derive coupled transport…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been…
Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…