相关论文: Fast spin precession and strong perpendicular magn…

Understanding the magnetic anisotropy at ferromagnetic metal/oxide interface is a fundamental and intriguing subject. Here we propose an approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) by varying MgO thickness…

Spinel oxides demonstrate significant technological promise due to the vast array of interrelated physical properties that their unique structure supports. Specifically, the Fe1+xV2-xO4 spinel system garners extensive interest due to the…

Ferrimagnetic Mn3Ga exhibits a unique combination of low saturation magnetization (Ms = 0.11 MA m-1) and high perpendicular anisotropy with a uniaxial anisotropy constant of Ku = 0.89 MJ m-3. Epitaxial c-axis films exhibit spin polarization…

Two-dimensional (2D) ferromagnets and their heterostructures offer fertile grounds for designing fascinating functionalities in ultra-thin spintronic devices. Here, by first-principles calculations, we report the discovery of energetically…

The ferrimagnetic inverse spinel NiCo2O4 has attracted extensive research interests for its versatile electrochemical properties, robust magnetic order, high conductivity, and fast spin dynamics, as well as its highly tunable nature due to…

We investigate the magnetic properties of the isostructural spinel-spinel interface of NiMn2O4(NMO)-Fe3O4. Although the magnetic transition temperature of the NMO film is preserved, both bulk and interface sensitive measurements demonstrate…

Continuously graded ferromagnetic thin films represent a new class of magnonic materials, where a spin-wave resonance spectrum can be tuned in resonance frequencies/fields, number of modes and even dispersion law by the magnetic properties…

The Nd0.6Sr0.4MnO3 manganite system exhibits a phase transition from paramagnetic insulating (PMI) to ferromagnetic metallic (FMM) state around its Curie temperature TC = 270 K (bulk). The morphology-driven changes in the kinetically…

We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy…

The field of oxide spintronics can strongly benefit from the establishment of robust ferromagnetic insulators with near room-temperature Curie temperature. Here we investigate the structural, electronic, and magnetic properties of…

Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth…

Mn-Zn ferrite nanoparticles have been subject of increasing research due to their desired properties for a wide range of applications. These properties include nanometer particle size control, tunable magnetic properties and low toxicity,…

In recent years, intrinsic two-dimensional (2D) magnetism aroused great interest because of its potential application in spintronic devices. However, low Curie temperature (\emph{T}$_c$) and magnetic anisotropy energy (MAE) limit its…

We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing…

In this study, we achieved the improvement of uniaxial perpendicular magnetic anisotropy (PMA) in the W/MgAl2O4/CoFeMnSi/W/CoFeMnSi/MgAl2O4/W heterostructure by manipulating the annealing temperature (TA) [350 C, 450 C, and 550 C]. We…

Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving an ultrathin Fe layer on an antiferromagnetic (AFM) CoO(001) surface.…

The effect of random competing single-ion anisotropies in antiferromagnets was studied using epitaxial Mn$_x$Ni$_{1-x}$F$_2$ antiferromagnetic thin film alloys grown via molecular beam epitaxy. The crystal structure of this material is…

The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001)…

Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on…

The successful commercialization of flexible spintronic devices requires a complete understanding of the impact of external strain on the structural, electronic, and magnetic properties of a system. The impact of bending-induced strain on…