相关论文: Superconductivity in Substitutional Ga-Hyperdoped …
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion…
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however…
Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping…
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on…
Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the…
The superconductivity phase diagrams of electron doped cuprates of the form R(2-x)CexCuO4 (with R= La, Pr, Nd, Sm, and Eu) have been determined for cerium compositions 0 < x < 0.36 in a consistent series of epitaxial thin films grown by…
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$…
Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic…
Applying an external pressure to indirectly electron-doped 122-type (Ba1-xLax)Fe2As2 epitaxial films enhances the superconducting critical temperature (Tc) up to 30.3 K. Different from the other family compounds, the Tc is enhanced not only…
The experimental realization of high-temperature superconductivity in compressed hydrides H$_3$S and LaH$_{10}$ at high pressures over 150 GPa has aroused great interest in reducing the stabilization pressure of superconducting hydrides.…
Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators.…
Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…
Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in…
The recent observation of superconducting state at atomic scale has motivated the pursuit of exotic condensed phases in two-dimensional (2D) systems. Here we report on a superconducting phase in two-monolayer crystalline Ga films…
Recently topological superconductors emerge as a platform to realise Majorana Fermions which has potential application in topological quantum computation. Superconductivity in these materials can be realised by chemical doping, high…
By partially substituting the tri-valence element La with di-valence element Sr in $LaOFeAs$, we introduced holes into the system. For the first time, we successfully synthesized the hole doped new superconductors $(La_{1-x}Sr_x)OFeAs$. The…
Pushing dopant concentrations beyond the solubility limit in semiconductors -- a process known as hyperdoping -- has been demonstrated as an effective strategy for inducing superconductivity in cubic-diamond Si and SiGe materials.…
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory…
By using solid state reaction method we have fabricated the hole doped $La_{1-x}Sr_xFeAsO$ superconductors with Sr content up to 0.13. It is found that the sharp anomaly at about 150 K and the low temperature upturn of resistivity are…
FeTe is known to become a superconductor when doped with oxygen. Using layer by layer growth of single crystal films by molecular beam epitaxy (MBE), we have studied how oxygen incorporates. If oxygen is supplied during growth of a layer,…