相关论文: High-order AMR in two-dimensional magnetic monolay…
We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered [(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates. In the multilayers where n=5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN, t(TaN),…
The role of dipolar interactions and anisotropy are important to obtain, otherwise forbidden, ferromagnetic ordering at finite temperature for ions arranged in two-dimensional (2D) arrays (monolayers). Here we demonstrate that conventional…
We report detailed study of angular-dependent magnetoresistance (AMR) with tilting angel $\theta$ from $c$-axis ranging from 0$^\circ$ to 360$^\circ$ on a high-quality FeSe single crystal. A pronounced AMR with twofold symmetry is observed,…
Angular magnetoresistance oscillations (AMRO) were originally discovered in organic conductors and then found in many other layered metals. It should be possible to observe AMRO to semiconducting bilayers as well. Here we present an…
Magnetic order and microwave absorption in amorphous ferromagnets and materials sintered from nanoscale ferromagnetic grains are investigated analytically and numerically within the random-anisotropy model. We show that a scaling argument…
We report nanoscale inter-particle magnetic orderings in self-assemblies of Fe3O4 nanoparticles (NPs), and the emergence of inter-particle antiferromagnetic (AF) (super-antiferromagnetic) correlations near the coercive field at low…
Quantum materials harbor a cornucopia of exotic transport phenomena challenging our understanding of condensed matter. Among these, a giant, non-saturating linearmagnetoresistance (MR) has been reported in various systems, from Weyl…
Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The…
Magnets with controllable magnetization and high critical temperature are essential for practical spintronics devices, among which the two-dimensional 1T-CrTe2 stands out because of its high experimental critical temperature up to about…
We study the Giant Magnetoresistance (GMR) ratio in magnetic multiayers with a single superconducting contact in the presence of spin-mixing processes. It has been recently shown that the GMR ratio of magnetic multilayers is strongly…
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…
The discovery of two-dimensional (2D) van der Waals magnets opened unprecedented opportunities for the fundamental exploration of magnetism in quantum materials and the realization of next generation spintronic devices. Here, based on a…
We investigate the magnetic properties of a Heisenberg ferrimagnetic multilayer by using Monte Carlo simulations. The aim of this work is to study the local structural anisotropy model which is a possible origin of the perpendicular…
Recent observation of intrinsic ferromagnetism in two-dimensional (2D) CrI$_3$ is associated with the large magnetic anisotropy due to strong spin-orbit coupling (SOC) of I. Magnetic anisotropy energy (MAE) defines the stability of…
Multiferroics where at least two primary ferroic orders are present and coupled in a single system constitute an important class of materials. They attracted special consideration as they present both intriguing fundamental physics problems…
The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
A detailed study of the evolution of the magnetoresistance was performed on electrodeposited Co/Cu multilayers with Cu layer thicknesses ranging from 0.5 nm to 4.5 nm. For thin Cu layers (up to 1.5 nm), anisotropic magnetoresistance (AMR)…
The search for a two-dimensional material that simultaneously fulfills some properties for its use in spintronics and optoelectronics, i.e., a suitable bandgap with high in-plane carrier mobility and good environmental stability, is the…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…