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We demonstrate that ambient pressure x-ray photoelectron spectroscopy (APXPS) can be used for in situ studies of dynamic changes in surface chemistry in a plasma environment. Hexagonal boron nitride (h-BN) was used in this study as a model…

Two-dimensional (2D) nitride materials such as hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C$_3$N$_4$), and beryllonitrene (BeN$_4$) have emerged as promising candidates for next generation electronic, optoelectronic, and…

材料科学 · 物理学 2025-10-16 Shreya G. Sarkar , Kuneh Parag Shah , Brahmananda Chakraborty

Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these…

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation…

The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electron microscopy (LEEM). The reflectivity of the electrons,…

介观与纳米尺度物理 · 物理学 2017-09-22 P. C. Mende , Q. Gao , A. Ismach , H. Chou , M. Widom , R. Ruoff , L. Colombo , R. M. Feenstra

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for…

材料科学 · 物理学 2011-11-11 Menno Bokdam , Petr A. Khomyakov , Geert Brocks , Zhicheng Zhong , Paul J. Kelly

The emerging two-dimensional (2D) materials exhibit a wide range of electronic properties, ranging from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides such as molybdenum disulfide, to semi-metallic…

介观与纳米尺度物理 · 物理学 2014-12-01 Fengnian Xia , Han Wang , Di Xiao , Madan Dubey , Ashwin Ramasubramaniam

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…

This paper reports on the growth and characterization of hexagonal boron nitride (hBN) and its use for solid-state thermal neutron detection. The hBN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates at a…

材料科学 · 物理学 2016-09-12 Kawser Ahmed , Rajendra Dahal , Adam Weltz , James J. -Q. Lu , Yaron Danon , Ishwara B. Bhat

Defects in hexagonal boron nitride (h-BN) layer can facilitate tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure…

介观与纳米尺度物理 · 物理学 2018-08-28 Ying Liu , Zhenbing Tan , Manohar Kumar , T. S. Abhilash , Guan-jun Liu , Pertti Hakonen

We introduce an interatomic potential for hexagonal boron nitride (hBN) based on the Gaussian approximation potential (GAP) machine learning methodology. The potential is based on a training set of configurations collected from density…

材料科学 · 物理学 2020-10-06 Fabian L. Thiemann , Patrick Rowe , Erich A. Müller , Angelos Michaelides

The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser…

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

Atomic defects in solid-state materials are building blocks for future quantum technologies, such as quantum communication networks, computers, and sensors. Until recently, a handful of defects in a small selection of host materials have…

介观与纳米尺度物理 · 物理学 2025-10-07 Tobias Vogl , Viktor Ivády , Isaac J. Luxmoore , Hannah L. Stern

Two-dimensional (2D) materials, such as graphene and hexagonal boron nitride, are new kind of materials that can serve as substrates for surface enhanced Raman spectroscopy (SERS). When combined with traditional metallic plasmonic…

材料科学 · 物理学 2018-02-28 Ming Xia

Hexagonal boron nitride (hBN) is a wide band gap, van der Waals material that is highly promising for solid-state quantum technologies as a host of optically addressable, paramagnetic spin defects. Intrinsic and extrinsic point defects…

量子物理 · 物理学 2025-09-12 Petros-Panagis Filippatos , Tom J. P. Irons , Katherine Inzani

Optical reflectivity contrast provides a simple, fast and noninvasive method for characterization of few monolayer samples of two-dimensional materials. Here we apply this technique to measure the thickness of thin flakes of hexagonal Boron…

The chemical activity of ionized hydrogen describes the potency of protons in solution and is used to define the pH with wide-ranging applications in biological and materials sciences. Measuring pH with graphene field-effect transistors…

应用物理 · 物理学 2022-10-26 Nicholas E. Fuhr , Mohamed Azize , David J. Bishop

Dielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. We study the dielectric loss of hexagonal boron nitride (hBN) thin films in the microwave regime by measuring the…