相关论文: Giant spin Hall effect with multi-directional spin…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Spin-orbit coupling (SOC), the core of numerous condensed-matter phenomena such as nontrivial band gap, magnetocrystalline anisotropy, etc, is generally considered to be appreciable only in heavy elements, detrimental to the synthetization…
The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques…
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was…
Accurate quantification of the spin-orbit torques (SOTs) is critical for the identification and applications of new spin-orbitronic effects. One of the most popular techniques to qualify the SOTs is the switching angle shift, where the…
The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments…
Magnetization switching using spin-orbit torque offers a promising route to developing non-volatile memory technologies. The prerequisite, however, is the charge-to-spin current conversion, which has been achieved traditionally by…
Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM…
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To…
Understanding the evolution of spin-orbit torque (SOT) with increasing heavy-metal thickness in ferromagnet/normal metal (FM/NM) bilayers is critical for the development of magnetic memory based on SOT. However, several experiments have…
Spin-orbit torque (SOT) enables efficient current-driven control of magnetization, offering a promising pathway toward low-power spintronic devices. However, the origin and propagation of both damping-like (DL) and field-like (FL) SOTs in…
We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…
We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with…
While current-induced spin-orbit torques (SOTs) have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative…
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of…
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the…
Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both…