相关论文: Quench switching of Mn2As
Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with…
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching…
The effect of Cu substitution on the stability of the CuMnAs tetragonal phase was studied both experimentally and by ab initio calculations. Polycrystalline samples with various compositions Cu$_{1+x}$Mn$_{1-x}$As $(x = 0 - 0.5)$ were…
Crystallographic, electronic transport, thermal and magnetic properties are reported for SrMn2As2 and CaMn2As2 single crystals grown using Sn flux. Rietveld refinements of powder x-ray diffraction data show that the two compounds are…
The orthorhombic antiferromagnetic compound CuMnAs was recently predicted to be an antiferromagnetic Dirac semimetal if both the Ry gliding and S2z rotational symmetries are preserved in its magnetic ordered state. In our previous work on…
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…
The effect of random competing single-ion anisotropies in antiferromagnets was studied using epitaxial Mn$_x$Ni$_{1-x}$F$_2$ antiferromagnetic thin film alloys grown via molecular beam epitaxy. The crystal structure of this material is…
The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM.…
High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…
Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and…
Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…
We report magnetic susceptibility \chi, isothermal magnetization M, heat capacity C_p and electrical resistivity \rho measurements on undoped EuMn2As2 and K-doped Eu0.96K0.04Mn2As2 and Eu0.93K0.07Mn2As2 single crystals with the trigonal…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
We present an investigation of the magnetic behavior of epitaxial MnAs films grown on GaAs(100). We address the dependence of the magnetic moment, ferromagnetic transition temperature ($T_c$) and magnetocrystalline anisotropy constants on…
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…