相关论文: Piezoelectric Manipulation and Engineering for Lay…
Valleytronics harnesses the valley degree of freedom -- energy-degenerate extrema in the electronic band structure -- for information storage and processing. Valley Hall effect (VHE) is a cornerstone of valleytronics, enabling electric…
The search for two-dimensional materials with exotic valley-dependent properties has attracted rapid attention as they are fundamentally intriguing and practically appealing for nanoscale device applications. Here, using first-principles…
The anomalous valley Hall effect (AVHE) is a pivotal phenomenon that allows for the exploitation of the valley degree of freedom in materials. A general strategy for its realization and manipulation is crucial for valleytronics. Here, by…
Piezomagnetism couples strain linearly to magnetic order producing magnetization. Thus, unlike magnetostriction, it enables bidirectional control of a net magnetic moment. If this effect becomes large at room temperature, it may be…
Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to enable innovative spintronic devices. However, the rare…
The nonlinear acoustic valley Hall effect (AVHE), a recently discovered novel acoustically driven phenomena, has sparked extensive interests in valleytronics. So far, only the intrinsic contributions from band structure (Berry curvature or…
We report on novel valley acoustoelectric effect, which can arise in a 2D material, like a transition metal dichalcogenide monolayer, residing on a piezoelectric substrate. The essence of this effect lies in the emergence of a drag electric…
Exploring the coupling between layer, magnetism, valley, and topology in two-dimensional (2D) materials is an important approach to deepen our understanding of materials properties. We propose 27 stable ferromagnetic semiconductor…
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect…
We systematically study the impact of various electron-acoustic-phonon coupling mechanisms on valley physics in two-dimensional materials. In the static strain limit, we find that Dirac cone tilt and deformation potential have analogous…
Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of…
The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…
We uncover a new origin of the planar Hall effect - as an intrinsic property of layer coherent electrons - that exists even in bilayer and trilayer atomically thin limit. It reforms the existing theories requiring three-dimensional orbital…
The electric Hall effect (EHE) is a newly identified Hall effect characterized by a perpendicular electric field inducing a transverse charge current in two-dimensional (2D) systems. Here, we propose a spin and valley version of EHE. We…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…
In two-dimensional materials where interacting Fermi pockets occur in valleys related by time-reversal symmetry, a spontaneous valley imbalance results in a novel state known as an orbital magnet. Due to the breaking of time-reversal…
Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…
Valleytronics is a rapidly advancing field that explores the use of the valley degree of freedom in electronic systems to encode and process information. It relies on electronic states with spin valley locking, first predicted and observed…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…