相关论文: Low-temperature fabrication of amorphous carbon fi…

Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental…

500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…

The large-area synthesis of high-crystalline-quality two-dimensional (2D) materials is at the core of novel material integration for semiconductor technology. This effort relies on developing fabrication and characterization techniques that…

The synthesis of wafer-scale two-dimensional amorphous carbon monolayers has been recently demonstrated. This material presents useful properties when integrated as coating of metals, semiconductors or magnetic materials, such as enabling…

I propose to use laser heating both for the substrate and the thermal evaporation sources in a vacuum chamber operating at pressures from XHV to values where the mean free path of the particles approaches or slightly exceeds the…

Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we…

We study how the substrate temperature influences the structural properties of carbon films deposited by PVD (physical vapor deposition) techniques. We adapted a heating system inside the deposition chamber, with temperatures up to…

The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In this work, we synthesize heteroepitaxial thin films of…

We report a lithographic process for creating high-resolution (<10 nm) carbon templates on Si(100). A scanning electron microscope, operating under low vacuum (10E-6 mbar), produces a carbon-containing deposit ("contamination resist") on…

Non-conventional epitaxial techniques, such as van der Waals epitaxy (vdWE) and remote epitaxy, have attracted substantial attention in the semiconductor research community for their capability to repeatedly produce high-quality…

Thermal conductivities $\Lambda $ of amorphous carbon thin films are measured in the temperatures range 80--400 K using the $3\omega $ method. Sample films range from soft a-C:H prepared by remote-plasma deposition ($\Lambda = 0.20$ W…

We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change growth conditions from N-rich to metal-rich in order to…

Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial…

(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here,…

In designing material functionalities for transition metal oxides, lattice structure and d-orbital occupancy are key determinants. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic…

In this paper, we offer large and realistic models of amorphous carbon spanning densities from 0.95 g/cm3 to 3.5 g/cm3 . The models are designed to agree as closely as possible with experimental diffraction data while simultaneously…

Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…

By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films…

Remote epitaxy on monolayer graphene is promising for synthesis of highly lattice mismatched materials, exfoliation of free-standing membranes, and re-use of expensive substrates. However, clear experimental evidence of a remote mechanism…

The ability to control porosity in oxide thin films is one of the key factors that determine their properties. Despite the abundance of dry processes for the synthesis of oxide porous layers, the high porosity range is typically achieved by…