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相关论文: Exploring Intrinsic and Extrinsic $p$-type Dopabil…

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Although $\beta$-TeO$_2$ is a promising $p$-type transparent conducting oxide (TCO) due to the large optical gap ($\sim$ 3.7 eV) and a light effective hole mass, its hole dopability still remains unexplored. In this work, electronic…

材料科学 · 物理学 2025-11-20 Vu Thi Ngoc Huyen , Soungmin Bae , Rafael Costa-Amaral , Yu Kumagai

Wide-bandgap two-dimensional (2D) beta-TeO2 has been reported as a high-mobility p-type transparent semiconductor (Nat. Electron. 2021, 4, 277-283), attracting significant attention. This "breakthrough" not only challenges the conventional…

材料科学 · 物理学 2024-12-30 Zewen Xiao , Chen Qiu , Su-Huai Wei , Hideo Hosono

The band structure, optical and defects properties of Ba_{2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or trans- parent conducting material. Ba_{2}TeO…

材料科学 · 物理学 2015-06-11 Jifeng Sun , Hongliang Shi , Mao-Hua Du , Theo Siegrist , David J. Singh

The search for a two-dimensional material that simultaneously fulfills some properties for its use in spintronics and optoelectronics, i.e., a suitable bandgap with high in-plane carrier mobility and good environmental stability, is the…

材料科学 · 物理学 2023-10-05 I. Arias-Camacho , A. M León , J. Mejía-Lopez

Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…

材料科学 · 物理学 2020-02-12 Jisoo Moon , Zengle Huang , Weida Wu , Seongshik Oh

Substitutional doping effectively modulates carrier polarity of semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) like MoS2. Although Fe doping typically induces n-type conductivity in monolayer MoS2, anomalous…

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

材料科学 · 物理学 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

Polar metals characterized by the simultaneous coexistence of ferroelectric distortions and metallicity have attracted tremendous attention. Developing such materials at low dimensions remains challenging since both conducting electrons and…

材料科学 · 物理学 2020-03-24 Tao Xu , Jingtong Zhang , Yuquan Zhu , Jie Wang , Takahiro Shimada , Takayuki Kitamura , Tong-Yi Zhang

The significance of p-type transparent oxide semiconductors (TOS) in the semiconductor industry is paramount, driving advancements in optoelectronic technologies for transparent electronic devices with unique properties. The recent…

材料科学 · 物理学 2025-01-22 Zewen Xiao

Interest in topological states of matter exploded over a decade ago with the theoretical prediction and experimental detection of three-dimensional topological insulators, especially in bulk materials that can be tuned out of it by doping.…

超导电性 · 物理学 2020-03-25 Ayo Kolapo , Tingxin Li , Pavan Hosur , John H. Miller

$\beta$-Ga$_2$O$_3$ is a leading ultra-wide band gap semiconductor, but its performance depends on precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the…

材料科学 · 物理学 2025-07-02 Channyung Lee , Michael A. Scarpulla , Elif Ertekin , Joel B. Varley

PbSe, a predicted two-dimensional (2D) topological crystalline insulator (TCI) in the monolayer limit, possess excellent thermoelectric and infrared optical properties. Native defects in PbSe take a crucial role for the applications.…

材料科学 · 物理学 2023-08-24 Qiwei Tian , Ping Li , Li Zhang , Yuan Tian , Long-Jing Yin , Lijie Zhang , Zhihui Qin

TiO$_2$ anatase has its significant importance in energy and environmental research. However, the major drawback of this immensely popular semi-conductor is its large bandgap of 3.2 eV. Several non-metals have been doped experimentally for…

材料科学 · 物理学 2020-02-25 Pooja Basera , Shikha Saini , Saswata Bhattacharya

Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H…

光学 · 物理学 2024-05-13 S M Iftiquar

Two-dimensional transition-metal dichalcogenides (TMDs) have attracted interest as post-Si channel candidates in transistor technology. However, despite their potential benefits, controllably doping TMDs has proven difficult. In this work,…

材料科学 · 物理学 2025-04-22 Nikhil Sivadas , Yongwoo Shin

Density functional theory (DFT) and DFT corrected for on-site Coulomb interactions (DFT+U) calculations are presented on Aluminium doping in bulk TiO$_2$ and the anatase (101) surface. Particular attention is paid to the mobility of oxygen…

材料科学 · 物理学 2014-03-24 Conn O'Rourke , David R. Bowler

Doping of a two-dimensional (2D) material by impurity atoms occurs \textit{via} two distinct mechanisms: absorption of the dopants by the 2D crystal or adsorption on its surface. To distinguish the relevant mechanism, we systematically dope…

材料科学 · 物理学 2023-04-04 Joel Davidsson , Fabian Bertoldo , Kristian S. Thygesen , Rickard Armiento

The first principles calculations (GGA) have been applied to study the crystallographic defects in $\alpha$-PbO in order to understand an origin of $n$- and $p$-type conductivity in otherwise undoped $\alpha$-PbO. It was found that…

材料科学 · 物理学 2015-06-15 J. Berashevich , J. A. Rowlands , A. Reznik

Lots of two-dimensional (2D) materials have been predicted theoretically, and further confirmed in experiment, which have wide applications in nanoscale electronic, optoelectronic and thermoelectric devices. Here, the thermoelectric…

材料科学 · 物理学 2017-10-25 San-Dong Guo , Ai-Xia Zhang

Among two-dimensional (2D) transition metal dichalcogenides (TMDs), platinum diselenide (PtSe2) stands at a unique place in the sense that it undergoes a phase transition from type-II Dirac semimetal to indirect-gap semiconductor as…

介观与纳米尺度物理 · 物理学 2019-03-26 Husong Zheng , Yichul Choi , Fazel Baniasadi , Dake Hu , Liying Jiao , Kyungwha Park , Chenggang Tao
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