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The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moir\'e superlattice that gives rise…

It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental…

介观与纳米尺度物理 · 物理学 2021-03-09 Claudio Puglia , Giorgio De Simoni , Francesco Giazotto

We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…

介观与纳米尺度物理 · 物理学 2012-10-10 S. Dröscher , C. Barraud , K. Watanabe , T. Taniguchi , T. Ihn , K. Ensslin

The beginning of high interest in two-dimensional (2D) crystals is marked by the synthesis of graphene, which constitutes exemplary monolayer material. This is due to the multiple extraordinary properties of graphene, particularly in the…

介观与纳米尺度物理 · 物理学 2025-02-21 Dominik Szczȩśniak , Jakub T. Gnyp , Marta Kielak

We demonstrate that, at the onset of conduction, an electrostatically defined quantum wire in bilayer graphene (BLG) with an interlayer asymmetry gap may act as a 1D semimetal, due to the multiple minivalley dispersion of its lowest…

介观与纳米尺度物理 · 物理学 2019-09-25 Thomas L M Lane , Angelika Knothe , Vladimir I Fal'ko

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external…

介观与纳米尺度物理 · 物理学 2011-10-03 J. E. Padilha , Matheus P. Lima , A. J. R. da Silva , A. Fazzio

Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…

We study the superconducting phase transition, both in a graphene bilayer and in graphite. For that purpose we derive the mean-field effective potential for a stack of graphene layers presenting hopping between adjacent sheets. For…

超导电性 · 物理学 2020-10-05 Lizardo H. C. M. Nunes , E. C. Marino , A. L. Mota

The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be…

Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…

材料科学 · 物理学 2016-06-08 Predrag Lazic , Kirill D. Belashchenko , Igor Zutic

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities…

材料科学 · 物理学 2015-05-13 M. C. Lemme , T. J. Echtermeyer , M. Baus , B. N. Szafranek , J. Bolten , M. Schmidt , T. Wahlbrink , H. Kurz

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in…

超导电性 · 物理学 2014-02-04 A. Ballestar , P. Esquinazi , J. Barzola-Quiquia , S. Dusari , F. Bern , R. R. da Silva , Y. Kopelevich

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we…

Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional material heterostructures. While this is achieved with independent top and bottom metallic gate…

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

介观与纳米尺度物理 · 物理学 2015-06-05 J. Velasco , Y. Lee , L. Jing , G. Liu , W. Bao , C. N. Lau

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…

介观与纳米尺度物理 · 物理学 2011-04-27 J. R. Williams , Tony Low , M. S. Lundstrom , C. M. Marcus

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

Lateral charge transport of a two-dimensional (2D) electronic system can be much influenced by feeding a current into another closely spaced 2D conductor, known as the Coulomb drag phenomenon -- a powerful probe of electron-electron…

介观与纳米尺度物理 · 物理学 2025-03-04 Yingjia Liu , Kaining Yang , Kenji Watanabe , Takashi Taniguchi , Wencai Ren , Zheng Vitto Han , Siwen Zhao