相关论文: Realizing tunable Fermi level in SnTe by defect co…
Topological insulators materialize a topological quantum state of matter where unusual gapless metallic state protected by time-reversal symmetry appears at the edge or surface. Their discovery stimulated the search for new topological…
We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three dimensional topological insulator, by introducing strong disorder in a layer of depth $d$ extending inward from the…
Based on a combination of $k \cdot p$ theory, band topology analysis and electronic structure calculations, we predict the (111) thin films of the SnTe class of three-dimensional (3D) topological crystalline insulators realize the quantum…
MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only…
Hybrid superconductor-semiconductor heterostructures are a promising platform for quantum devices based on mesoscopic and topological superconductivity. In these structures, a semiconductor must be in close proximity to a superconductor and…
The investigation of topological materials has uncovered groundbreaking phases of matter with significant implications for quantum technologies. Here, we explore the antiferromagnetic topological insulator family…
Tin telluride is a narrow gap semiconductor with promising properties for IR optical applications and topological insulators. We report a convenient colloidal synthesis of quasi-two-dimensional SnTe nanocrystals through the hot-injection…
Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to…
Stoichiometric SnTe is theoretically a small gap semiconductor that undergoes a ferroelectric distortion on cooling. In reality however, crystals are always non-stoichiometric and metallic; the ferroelectric transition is therefore more…
Light-induced phase transitions offer a method to dynamically modulate topological states in bulk complex materials. Yet, next-generation devices demand nanoscale architectures with contact resistances near the quantum limit and precise…
Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite…
We have performed angle-resolved photoemission spectroscopy of the strongly spin-orbit coupled low-carrier density superconductor Sn1-xInxTe (x = 0.045) to elucidate the electronic states relevant to the possible occurrence of topological…
Topological properties in condensed matter physics are often claimed to be a fruitful resource for technical applications, but so far they only play a minor role in applications. Here we propose to put topological edge states to use in…
We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI. Through a comparative study between bismuth selenide and…
Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present…
The tin-selenide and tin-sulfide classes of materials undergo multiple structural transitions under high pressure leading to periodic lattice distortions, superconductivity, and topologically non-trivial phases, yet a number of…
The recently discovered three dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit…
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…
Topological aspects represent currently a boosting area in condensed matter physics. Yet there are very few suggestions for technical applications of topological phenomena. Still, the most important is the calibration of resistance…
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of…