相关论文: Theoretical spin transport analysis for a spin pse…
In this work, we present a theoretical study of spin transport in a trilayer pseudospin-valve (PSV) heterostructure composed of electrode (L_l)/insulator/electrode (L_r). The insulating layer corrresponds to a semiconductor (SC) with a…
In this work, we study the spin transport at the Ferromagnet$|$Noncentrosymmetric Superconductor (F$|$NCSC) junction of a Ferromagnet$|$Noncentrosymmetric Superconductor$|$Ferromagnet (F$|$NCSC$|$F) spin valve. We investigate the Tunnelling…
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…
A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…
We present a comprehensive theory of spin transport in a non-degenerate semiconductor that is in contact with multiple ferromagnetic terminals. The spin dynamics in the semiconductor is studied during a perturbation of a general,…
We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…
A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect,…
Altermagnet-based heterojunctions have demonstrated magnetoresistive effects in experiments, however, a predictive theoretical model for non-ferromagnetic structures has remained elusive. In this work, we develop a tunneling-based…
We study the interplay of both Rashba and Dresselhaus spin-orbit couplings (SOCs) and a uniform perpendicular magnetic field $\textbf{B}$ on the transport of a spin-polarized electron along a curved quantum wire. Eigenenergies and…
We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model…
We present a transfer matrix approach that combines the Blonder-Tinkham-Klapwijk (BTK) formalism and self-consistent solutions to the Bogolibuov-de Gennes (BdG) equations and use it to study the tunneling conductance and spin transport in…
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
We study the spin-transfer torque and magnetoresistance of a ferromagnet$\mid$superconductor$\mid$ferromagnet spin-valve, allowing for an arbitrary magnetization misorientation and treating both s-wave and d-wave symmetries of the…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…
We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…
We theoretically investigate spin-dependent transport in a TMD-based vertical spin valve, taking WSe$_2$ as a representative example. Using effective Hamiltonians for the heterostructure and the Landauer formula, we derive the transmission…