相关论文: Two-dimensional non-volatile valley spin valve
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D…
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…
Valley Hall effect is fundamental to valleytronics and provides a promising avenue for advancing information technology. While conventional valley Hall effect requires the inversion symmetry breaking, the recently proposed nonlinear valley…
Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the…
All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…
We propose a new type of spin-valley locking (SVL), named $\textit{C}$-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled…
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…
Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and…
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however,…
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…
Non-volatile manipulation of valley polarization in solids has long been desired for valleytronics applications but remains challenging. Here, we propose a novel strategy for non-volatile manipulating valleys through bilayer stacking, which…
The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…