相关论文: Harnessing Ferro-Valleytricity in Penta-Layer Rhom…
Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-functional electrical and…
A finite Hall conductance under zero magnetic field implies time reversal symmetry (TRS) breaking due to magnetic order. In rhombohedral stacked multilayer graphene, the angular momentum that breaks TRS can result from the orbital degree of…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Rhombohedral graphene multilayers provide a clean and highly reproducible platform to explore the emergence of superconductivity and magnetism in a strongly interacting electron system. Here, we use electronic compressibility and local…
Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of…
I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…
Recent years have witnessed a great interest in orbital related electronics (also termed as orbitronics). In the current work, we present a first-principles density functional theory calculation on the orbital magnetic moments, intrinsic…
Crystalline rhombohedral multilayer graphene (RMG) has emerged as an ideal platform for studying unconventional superconductivity. Here, we report the observation of superconductivity in moir\'eless rhombohedral heptalayer graphene (RHG) at…
Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development…
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…
Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases,…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
Rhombohedral multilayer graphene has emerged as a promising platform for exploring correlated and topological quantum phases, enabled by its Berry-curvature-bearing flat bands. While prior work has focused on separated conduction and…
Analogous to charge and spin, electrons in solids endows an additional degree of freedom: the valley pseudospin. Two-dimensional hexagonal materials such as graphene exhibit two valleys, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$.…
Electrons in two-dimensional hexagonal materials have valley degree of freedom, which can be used to encode and process quantum information. The valley-selective excitations, governed by the circularly polarised light resonant with the…
Electron doped rhombohedral multilayer graphene at high displacement field features an exceptionally flat band minimum with near-ideal quantum geometry. Experiments in this regime observe the formation of a 'quarter metal,' in which the…
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is…
Ferromagnetism is most common in transition metal compounds but may also arise in low-density two-dimensional electron systems, with signatures observed in silicon, III-V semiconductor systems, and graphene moir\'e heterostructures. Here we…