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In this work, for the first time, a density functional theory (DFT) based comprehensive theoretical study is performed on the surface electronic properties of Bi2Se3 nanosheet in the presence of a surface capping layer as well as mechanical…

Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological…

介观与纳米尺度物理 · 物理学 2016-08-02 T. H. Wang , H. T. Jeng

Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of…

介观与纳米尺度物理 · 物理学 2010-09-14 Hadar Steinberg , Dillon R. Gardner , Young S. Lee , Pablo Jarillo-Herrero

Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…

Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…

介观与纳米尺度物理 · 物理学 2013-01-01 Pouyan Ghaemi , Roger Mong , Joel E. Moore

We present ab initio electronic structure calculations based on density functional theory for the thermoelectric properties of Bi$_2$Te$_3$ films. Conductivity and thermopower are computed in the diffusive limit of transport based on the…

材料科学 · 物理学 2014-02-04 F. Rittweger , N. F. Hinsche , P. Zahn , I. Mertig

Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum…

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…

介观与纳米尺度物理 · 物理学 2015-03-12 Dohun Kim , Paul Syers , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer

We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical…

Thermoelectric materials, enabling the directing conversion between heat and electricity, are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil…

材料科学 · 物理学 2018-05-09 Min Hong , Zhi-Gang Chen , Jin Zou

Critical thermoelectric parameters including Seebeck coefficient, electrical conductivity, thermal conductivity and figure of merit ZT of one-dimensional coaxial Bi2Te3/Sb2Te3 nanocomposite were modeled by following the single carrier…

材料科学 · 物理学 2011-01-31 Qilin Gu

Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological…

材料科学 · 物理学 2019-08-13 Amit Jash , Kamalika Nath , T. R. Devidas , A. Bharathi , S. S. Banerjee

Thermoelectric performance is of interest for numerous applications such as waste heat recovery and solid state energy conversion, and will be seen to be closely connected to topological insulator behavior. In this context we here report…

材料科学 · 物理学 2015-01-26 Hongliang Shi , David Parker , Mao-Hua Du , David J. Singh

Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…

介观与纳米尺度物理 · 物理学 2010-12-14 Hadar Steinberg , Dillon R. Gardner , Young S. Lee , Pablo Jarillo-Herrero

We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator Bi$_2$Se$_3$. Realistic models of experimentally observed Bi$_2$Se$_3$ nanowires and…

介观与纳米尺度物理 · 物理学 2018-04-13 Naunidh Virk , Gabriel Autès , Oleg V. Yazyev

Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric…

材料科学 · 物理学 2016-07-19 San-Dong Guo , Lun Zhang

Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions.…

We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films…

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

The structural stability, electronic structure, and thermal transport properties of one to six quintuple layers (QLs) of Bi2Se3 are investigated by van der Waals density functional theory and semi-classical Boltzmann theory. The bandgap…

材料科学 · 物理学 2014-02-19 Y. Saeed , N. Singh , U. Schwingenschlog
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