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In nano-device applications using 2D van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we…

介观与纳米尺度物理 · 物理学 2018-12-07 Young-Gwan Choi , Do-Gyeom Jeong , H. I. Ju , C. J. Roh , Geonhwa Kim , Bongjin Simon Mun , Tae Yun Kim , Sang-Woo Kim , J. S. Lee

Controlling the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for tailoring their optical and electronic properties. While phase transitions in monolayer TMDs and semiconductor-to-metal…

Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready…

Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…

介观与纳米尺度物理 · 物理学 2021-04-06 Nathan J. McLaughlin , Yoav Kalcheim , Albert Suceava , Hailong Wang , Ivan K. Schuller , Chunhui Rita Du

Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…

Vanadium dioxide, VO2, and its metal-insulator transition at T=340K continues to receive considerable interest. The question whether the physics of the insulating low-temperature phase is dominated by the Mott or the Peierls scenario, i.e.…

强关联电子 · 物理学 2008-11-10 Jan M. Tomczak , Silke Biermann

RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a…

The development of photonic integrated components for terahertz has become an active and growing research field. Despite its numerous applications, several challenges are still present in hardware design. We demonstrate an on-chip active…

Two-dimensional transition-metal dichalcogenides (TMDs) have attracted interest as post-Si channel candidates in transistor technology. However, despite their potential benefits, controllably doping TMDs has proven difficult. In this work,…

材料科学 · 物理学 2025-04-22 Nikhil Sivadas , Yongwoo Shin

Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to…

In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition…

材料科学 · 物理学 2013-01-14 E. Radue , E. Crisman , L. Wang , S. Kittiwatanakul , J. Lu , S. A. Wolf , R. Wincheski , R. A. Lukaszew , I. Novikova

Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of…

Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…

Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches,…

We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity…

材料科学 · 物理学 2015-06-05 T. Tachikawa , M. Minohara , Y. Nakanishi , Y. Hikita , M. Yoshita , H. Akiyama , C. Bell , H. Y. Hwang

Moir\'e heterobilayers exhibiting spatially varying band alignment and electron and hole localization that can be precisely controlled through the twist angle have emerged as exciting platforms for studying complex quantum phenomena. While…

1T-TaS$_2$ exhibits several resistivity phases due to the modulation of charge density wave (CDW). The fact that such phase transition can be driven electrically has attracted a lot of attention in the recent past towards…

材料科学 · 物理学 2023-07-21 Mehak Mahajan , Kausik Majumdar

Scalable and controlled doping of two-dimensional transition metal dichalcogenides is essential for tuning their electronic and optoelectronic properties. In this work, we demonstrate a robust approach for substitution of vanadium in…

介观与纳米尺度物理 · 物理学 2026-04-09 Abhishek Bajgain , Santu Prasad Jana , Alexander Samokhvalov , Thomas Parker , John Derek Demaree , Ramesh C. Budhani

Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$…

We experimentally investigate the sensing properties of an open cavity operating in the THz regime and realized by employing as mirrors two thin vanadium dioxide (VO2) films grown on silicon parallel plates and separated by a variable…