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We present a microscopic theory of the anomalous Hall effect in metallic multi-band ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian…

介观与纳米尺度物理 · 物理学 2010-07-20 Alexey A. Kovalev , Jairo Sinova , Yaroslav Tserkovnyak

Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of…

介观与纳米尺度物理 · 物理学 2018-05-23 Hui Li , Huanwen Wang , Hongtao He , Jiannong Wang , Shun-Qing Shen

A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these…

介观与纳米尺度物理 · 物理学 2025-03-18 Sofie Kölling , Florian R. Westerhof , Alexander Brinkman

Since the experimental realisation of the integer quantised Hall effect in a two dimensional electron system subject to strong perpendicular magnetic fields in 1980, a central question has been the interrelation between the conductance…

介观与纳米尺度物理 · 物理学 2013-11-26 E. M. Kendirlik , S. Sirt , S. B. Kalkan , N. Ofek , V. Umansky , A. Siddiki

When phonons couple to fermions in 2D semimetals, the interaction may turn the system into an insulator. There are several insulating phases in which the time reversal and the sublattice symmetries are spontaneously broken. Examples are…

强关联电子 · 物理学 2021-05-12 Andreas Sinner , Klaus Ziegler

The anomalous Hall effect (AHE), conventionally associated with time-reversal symmetry breaking in ferromagnetic materials, has recently been observed in nonmagnetic topological materials, raising questions about its origin. We unravel the…

介观与纳米尺度物理 · 物理学 2025-08-22 Huimin Xie , Bo Fu , Huan-Wen Wang , Wenyu Shan , Shun-Qing Shen

We calculate the frequency-dependent longitudinal and Hall conductivities and the Faraday and Kerr rotation angles for a single sheet of anisotropic Dirac semimetal protected by nonsymmorphic symmetry in the presence of a Zeeman term…

介观与纳米尺度物理 · 物理学 2023-06-26 Amarnath Chakraborty , Guang Bian , Giovanni Vignale

We numerically study the quantum Hall effect in biased bilayer graphene based on a tight-binding model in the presence of disorder. Integer quantum Hall plateaus with quantized conductivity $\sigma_{xy}=\nu e^2/h$ (where $\nu$ is any…

介观与纳米尺度物理 · 物理学 2009-07-29 R. Ma , L. J. Zhu , L. Sheng , M. Liu , D. N. Sheng

The Dirac fermions at the surface of a topological insulator can be gapped by introducing magnetic dopants. Alternatively, in an ultra-thin slab with thickness on the order of the extent of the surface states, both the top and bottom…

介观与纳米尺度物理 · 物理学 2015-12-16 Calvin J. Tabert , J. P. Carbotte

We propose a modified Boltzmann nonlinear electric-transport framework which differs from the nonlinear generalization of the linear Boltzmann formalism by a contribution that has no counterpart in linear response. This contribution follows…

介观与纳米尺度物理 · 物理学 2019-11-06 Cong Xiao , Z. Z. Du , Qian Niu

Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is…

Optical Hall conductivity, as directly related to Faraday rotation, is theoretically studied for bilayer and trilayer graphene. In bilayer graphene, the trigonal warping of the band dispersion greatly affects the resonance structures in…

介观与纳米尺度物理 · 物理学 2012-10-17 Takahiro Morimoto , Mikito Koshino , Hideo Aoki

Mechanical deformations of graphene induce a term in the Dirac Hamiltonian which is reminiscent of an electromagnetic vector potential. Strain gradients along particular lattice directions induce local pseudomagnetic fields and substantial…

介观与纳米尺度物理 · 物理学 2020-01-22 Eran Sela , Yakov Bloch , Felix von Oppen , Moshe Ben Shalom

We present the experimental data of the electric features of the silicon nanosandwichstructures obtained by silicon planar technology in the frameworks of the Hall geometry that represent the ultra-shallow silicon quantum well of 2 nm wide…

介观与纳米尺度物理 · 物理学 2020-12-01 N. I. Rul , N. T. Bagraev , L. E. Klyachkin , A. M. Malyarenko

A key step towards dissipationless transport devices is the quantum anomalous Hall effect, which is characterized by an integer quantized Hall conductance in a ferromagnetic insulator with strong spin-orbit coupling. In this work, the…

介观与纳米尺度物理 · 物理学 2013-08-29 Hai-Zhou Lu , Shun-Qing Shen

A comparative study of anomalous-Hall current injection and anisotropic current injection (through planar Hall effect) are studied in Hall devices contacted to a lateral load circuit. Hall currents are injected into the load circuit from…

介观与纳米尺度物理 · 物理学 2025-10-06 V. Desbuis , D. Lacour , M. Hehn , S. Geiskopf , L. Michez , J. Rial , V. Baltz , J. -E. Wegrowe

We present the concept of a feedback-based topological acoustic metamaterial as a tool for realizing autonomous and active guiding of sound beams along arbitrary curved paths in free two-dimensional space. The metamaterial building blocks…

应用物理 · 物理学 2021-01-01 Lea Sirota , Daniel Sabsovich , Yoav Lahini , Roni Ilan , Yair Shokef

The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The…

Intrinsic anomalous Hall effect (AHE) formulated by geometric properties of Bloch wavefunctions is a ubiquitous transport phenomenon not limited to magnetic systems but also allowed in non-magnetic ones under an external field breaking…

A formula for the Hall response of interacting multi-band systems with arbitrary band topology and spin-orbit coupling is derived. The formula is valid at finite frequency, which is relevant for Faraday rotation, and it takes into account…

强关联电子 · 物理学 2019-03-04 R. Nourafkan , A. - M. S. Tremblay
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