相关论文: Thermal contribution to current-driven antiferroma…
Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A…
Spintronics in ferromagnetic metals is built on a complementary set of phenomena in which magnetic configurations influence transport coefficients and transport currents alter magnetic configurations. In this Letter we propose that…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…
We report on the application of a feedback-controlled electromigration technique for the formation of nanometer-sized gaps in mesoscopic gold wires and rings. The effect of current density and temperature, linked via Joule heating, on the…
It is shown that with increasing magnitude of current (I), resistivity of Sm0.6Sr0.4MnO3 transforms from a smooth to a discontinuous insulator-metal transition which is also accompanied by an abrupt decrease in temperature of the sample. We…
The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…
Systematically magnetic and magnetothermal measurements at temperatures down to 2 K and magnetic fields up to 13.5 Tesla for Gd(OH)3 Single Crystal Nanowires - Quasi-1D Large Spin (S = -7/2) Chain Antiferromagnet have been conducted. We…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning transmission x-ray microscopy (STXM) and numerical…
Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…
During the standard ac lock-in measurement of the resistance of a two-dimensional electron gas (2DEG) applying an ac current $I = \sqrt{2} I_0 \sin(\omega t)$, the electron temperature $T_e$ oscillates with the angular frequency $2 \omega$…
In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic…
The discovery of current-induced spin-orbit torque (SOT) orthogonal reorientation, also known as orthogonal switching, of metallic Mn$_2$Au and CuMnAs has opened the door for ultrafast writing of an antiferromagnet (AFM). Phenomenological…
The magnetic orientations and switching fields of a CoCrPt-Ru-CoCrPt synthetic ferrimagnet with perpendicular magnetic anisotropy have been studied in the temperature range from 2 K to 300 K. It was found that two sets of magnetic…
The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic…
Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as The Holy Grail of magnetoelectricity.We report this long-sought effect using a new physical process of coupling between magnetic and…
Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal…