相关论文: X-ray imaging camera using INTPIX4NA SOIPIX detect…
Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout…
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this…
We describe a high resolution imaging detector based on a single 80 mm micro-channel-plate (MCP) and a phosphor screen mounted on a UHV flange of only 100 mm inner diameter. It relies on standard components and we describe its performance…
Ensuring end-to-end security in image sensors has become essential as visual data can be exposed through multiple stages of the imaging pipeline. Advanced protection requires encryption to occur before pixel values appear on any readout…
A novel X-ray diagnostic of laser-fusion plasmas is described, allowing 2D monochromatic images of hot, dense plasmas to be obtained in any X-ray photon energy range, over a large domain, on a single-shot basis. The device (named…
In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices…
We report on a new photon-counting detector possessing unprecedented spatial resolution, moderate spectral resolution and high background-rejection capability for 0.1-100 keV X-rays. It consists of an X-ray charge-coupled device (CCD) and…
A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
High resolution image sensors require electrical access to each individual pixel for signal readout. Such access is especially challenging for ultra-miniaturized pixels, for heterogeneously integrated sensing and readout layers in…
High energy radiations are nowadays cornerstone in scientific, medical and industrial imaging and cancer therapy. However, their detection and dosimetry are restricted to systems of modest compactness that are not compatible with endoscopy.…
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing.…
The upgrade of the China Spallation Neutron Source (CSNS-II) will raise the proton beam power to 500 kW. Consequently, the existing Timepix3-based detector systems, limited to a count rate of 80 Mhits/s, will encounter severe saturation…
To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation. 4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean…
Single-pixel cameras based on the concepts of compressed sensing (CS) leverage the inherent structure of images to retrieve them with far fewer measurements and operate efficiently over a significantly broader spectral range than…
The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical…
A novel gaseous two-dimensional imaging detector "Micro Pixel Chamber (micro-PIC)" has been developed. This detector is based on double sided printed circuit board (PCB). We have developed large area (10cm x 10cm) micro-PICs with 65536…
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…
Operation of semiconductor scintillators requires optically-tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially…