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This paper is devoted to photocarrier transport across a two-dimensional graphene-semiconductor Schottky junction. We study linear response to monochromatic light with excitation energy well below the semiconductor band gap. The operation…

介观与纳米尺度物理 · 物理学 2018-05-31 Maxim Trushin

Bose-Einstein condensation is a phenomenon well known for material particles as cold atomic gases, and this concept has in recent years been extended to photons confined in microscopic optical cavities. Essential for the operation of such a…

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal…

介观与纳米尺度物理 · 物理学 2011-09-26 Aniruddha Konar , Raj Jana , Tian Fang , Guowang Li , William O'Brien , Debdeep Jena

Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have…

介观与纳米尺度物理 · 物理学 2023-04-12 Xiao Zhang , Emmanouil Kioupakis

Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting…

We investigate the intrinsic microscopic mechanism of photon upconversion in air-suspended single-walled carbon nanotubes through photoluminescence and upconversion photoluminescence spectroscopy. Nearly linear excitation power dependence…

介观与纳米尺度物理 · 物理学 2024-10-14 Daichi Kozawa , Shun Fujii , Yuichiro K. Kato

The possibility of creating heterostructure of two-dimensional (2D) materials has emerged as a viable route towards realizing novel optoelectronic devices. However, the low light absorption due to their small absorption cross section,…

介观与纳米尺度物理 · 物理学 2023-03-14 Shubhrasish Mukherjee , Didhiti Bhattacharya , Samit Kumar Ray , Atindra Nath Pal

The coupling of the electron system to lattice vibrations and their time-dependent control and detection provides unique insight into the non-equilibrium physics of semiconductors. Here, we investigate the ultrafast transient response of…

The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretical predictions of a "pseudo-direct" band gap, characterized…

材料科学 · 物理学 2024-12-17 Christopher A. Broderick , Xie Zhang , Mark E. Turiansky , Chris G. Van de Walle

A double-edged sword in two-dimensional material science and technology is an optically forbidden dark exciton. On the one hand, it is fascinating for condensed matter physics, quantum information processing, and optoelectronics due to its…

We study the photoluminescence dynamics of ultra-cold indirect excitons optically created in a double quantum well heterostructure. Above a threshold laser excitation, our experiments reveal the apparition of the so-called inner…

介观与纳米尺度物理 · 物理学 2012-02-10 M. Alloing , A. Lemaitre , E. Galopin , F. Dubin

Excitons, quasi particles composed of an electron and a hole, play an important role in optical responses in low-dimensional nanostructures. In this work, we have investigated exciton diffusion in a monolayer MoSe2 encapsulated between…

介观与纳米尺度物理 · 物理学 2020-09-30 T. Hotta , S. Higuchi , A. Ueda , K. Shinokita , Y. Miyauchi , K. Matsuda , K. Ueno , T. Taniguchi , K. Watanabe , R. Kitaura

The energy landscape of optical excitations in mono- and few-layer transition metal dichalcogenides (TMDs) is dominated by optically bright and dark excitons. These excitons can be fully localized within a single TMD layer, or the electron-…

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials…

It is well-known that exciton effects are determinant to understand the optical absorption spectrum of low-dimensional materials. However, the role of excitons in nonlinear optical responses has been much less investigated at an…

介观与纳米尺度物理 · 物理学 2024-06-21 J. J. Esteve-Paredes , M. A. García-Blázquez , A. J. Uría-Álvarez , M. Camarasa-Gómez , J. J. Palacios

Semi-metallic graphene and semiconducting monolayer transition metal dichalcogenides (TMDCs) are the two-dimensional (2D) materials most intensively studied in recent years. Recently, black phosphorus emerged as a promising new 2D material…

介观与纳米尺度物理 · 物理学 2014-11-07 Xiaomu Wang , Aaron M. Jones , Kyle L. Seyler , Vy Tran , Yichen Jia , Huan Zhao , Han Wang , Li Yang , Xiaodong Xu , Fengnian Xia

A quantum-dynamical analysis of phonon-driven exciton dissociation at polymer heterojunctions is presented, using a hierarchical electron-phonon model parameterized for three electronic states and 24 vibrational modes. Two interfering decay…

软凝聚态物质 · 物理学 2009-11-13 Hiroyuki Tamura , John G. S. Ramon , Eric R. Bittner , Irene Burghardt

We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the…

Transition metal dichalcogenide (TMD) monolayers (MLs) exhibit rich photoluminescence spectra associated with interband optical transitions of direct-gap semiconductors. Upon absorption of photons, direct excitons with zero center-of-mass…

TMDCs have attracted a lot of attention in recent years due to their unique indirect to direct band gap transition from bulk to monolayer thickness. Strong confinement in the out-of-plane direction enhances the Coulomb potential between the…