相关论文: Exploring Topological Transport in Pt$_2$HgSe$_3$ …
Quantum anomalous Hall insulators are topologically characterized by non-zero integer Chern numbers, the sign of which depends on the direction of the exchange field that breaks time-reversal symmetry. This feature allows the manipulation…
Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both…
Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…
In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…
We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator Bi$_2$Se$_3$. Realistic models of experimentally observed Bi$_2$Se$_3$ nanowires and…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…
We report the observation of the superconducting proximity effect in nanoribbons of a candidate topological insulator (Bi2Se3) which is interfaced with superconducting (tungsten) contacts. We observe a supercurrent and multiple Andreev…
One-dimensional (1D) gapless hinge states are predicated in the three-dimensional (3D) higher-order topological insulators and topological semimetals, because of the higher-order bulk-boundary correspondence. Nevertheless, the topologically…
Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental…
A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of…
Topological insulators represent novel phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport…
Physical systems with non-trivial topological order find direct applications in metrology[1] and promise future applications in quantum computing[2,3]. The quantum Hall effect derives from transverse conductance, quantized to unprecedented…
A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and…
The outstanding transport properties expected at the edge of two-dimensional time-reversal invariant topological insulators have proven to be challenging to realize experimentally, and have so far only been demonstrated in very short…
The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium…
Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet…
The intrinsic spin Hall conductivity of typical topological insulators Sb$_2$Se$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$, and Bi$_2$Te$_3$ in the bulk form, is calculated from first-principles by using density functional theory and the linear…