相关论文: Probabilistic Tracker Management Policies for Low-…
RowHammer vulnerabilities pose a significant threat to modern DRAM-based systems, where rapid activation of DRAM rows can induce bit-flips in neighboring rows. To mitigate this, state-of-the-art host-side RowHammer mitigations typically…
The Rowhammer vulnerability continues to get worse, with the Rowhammer Threshold (TRH) reducing from 139K activations to 4.8K activations over the last decade. Typical Rowhammer mitigations rely on tracking aggressor rows. The number of…
This paper investigates secure low-cost in-DRAM trackers for mitigating Rowhammer (RH). In-DRAM solutions have the advantage that they can solve the RH problem within the DRAM chip, without relying on other parts of the system. However,…
After a plethora of high-profile RowHammer attacks, CPU and DRAM vendors scrambled to deliver what was meant to be the definitive hardware solution against the RowHammer problem: Target Row Refresh (TRR). A common belief among practitioners…
Per Row Activation Counting (PRAC) has emerged as a robust framework for mitigating RowHammer (RH) vulnerabilities in modern DRAM systems. However, we uncover a critical vulnerability: a timing channel introduced by the Alert Back-Off (ABO)…
This paper provides the fundamental mechanisms of two types of row activation-induced bit flips and proposes in-DRAM protection techniques. RowBleed occurs when a victim row experiences charge leakage due to transistor's threshold voltage…
DRAM scaling has exacerbated the RowHammer vulnerability. To counter this, JEDEC recently introduced Per Row Activation Counting (PRAC) with the Alert Back-Off protocol as an optional DDR5 feature. While promising, PRAC requires per-row…
JEDEC has introduced the Per Row Activation Counting (PRAC) framework for DDR5 and future DRAMs to enable precise counting of DRAM row activations. PRAC enables a holistic mitigation of Rowhammer attacks even at ultra-low Rowhammer…
RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure robust DRAM operation, state-of-the-art…
Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips,…
This paper challenges the existing victim-focused counter-based RowHammer detection mechanisms by experimentally demonstrating a novel multi-sided fault injection attack technique called Threshold Breaker. This mechanism can effectively…
In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…
As Dynamic Random Access Memories (DRAM) scale, they are becoming increasingly susceptible to Row Hammer. By rapidly activating rows of DRAM cells (aggressor rows), attackers can exploit inter-cell interference through Row Hammer to flip…
RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g.,…
As DRAM density increases, Rowhammer becomes more severe due to heightened charge leakage, reducing the number of activations needed to induce bit flips. The DDR5 standard addresses this threat with in-DRAM per-row activation counters…
RowHammer stands out as a prominent example, potentially the pioneering one, showcasing how a failure mechanism at the circuit level can give rise to a significant and pervasive security vulnerability within systems. Prior research has…
RowHammer attacks are a growing security and reliability concern for DRAMs and computer systems as they can induce many bit errors that overwhelm error detection and correction capabilities. System-level solutions are needed as process…
The RowHammer vulnerability in DRAM is a critical threat to system security. To protect against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips rely on undocumented, proprietary, on-die mitigations, commonly known…
To address the issue of powerful row hammer (RH) attacks, our study involved an extensive analysis of the prevalent attack patterns in the field. We discovered a strong correlation between the timing and density of the active-to-active…
DRAM cells are susceptible to Data-Disturbance Errors (DDE), which can be exploited by an attacker to compromise system security. Rowhammer is a well-known DDE vulnerability that occurs when a row is repeatedly activated. Rowhammer can be…