相关论文: Towards electrical domain-wall control in polyacet…
Electric polarization and metallicity are long believed not to coexist until the emergence of exceptionally rare material examples including the bulk polar metals and more recently two-dimensional (2D) van der Waals (vdW) materials such as…
We study plasmonic excitations in the limit of few electrons, in one-atom thick sodium chains, and characterize them based on collectivity. We also compare the excitations to classical localised plasmon modes and find for the longitudinal…
Molecular electronics and other technologies whose components comprise individual molecules have been pursued for half a century because the molecular scale represents the limit of miniaturisation of objects whose structure is tuneable for…
We consider current-induced domain wall motion and, the reciprocal process, moving domain wall-induced current. The associated Onsager coefficients are expressed in terms of scattering matrices. Uncommonly, in (Ga,Mn)As, the effective…
Based on the recently found non-trivial topology of buckled antimonene, we propose the conceptual design of a quantized switch that is protected by topology and a mechanism to create configurable 1D wire channels. We show that the…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
The existence of a system of short-live discrete volume-localized electron quantum levels in positively charged fullerenes is theoretically and numerically demonstrated using the example of fullerenes C60 and C20. Unlike well-studied…
Electrical control of amplitude and phase of terahertz radiation (THz) is the key technological challenge for high resolution and noninvasive THz imaging. The lack of an active materials and devices hinders the realization of these imaging…
In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work,…
We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs)…
Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer…
The surface plasmon-polaritons (SPPs) switch is the key element of the integrated devices in optical computation and terahertz (THz) communications. In this paper, we propose a novel design of THz SPPs switch based on quantum engineering.…
We present fractional quantum Hall domain walls confined in a gate-defined wire structure. Our experiments utilize spatial oscillation of domain walls driven by radio frequency electric fields to cause nuclear magnetic resonance. The…
The Su-Schrieffer-Heeger (SSH) model is likely the simplest one-dimensional concept to study non-trivial topological phases and topological excitations. Originally developed to explain the electric conductivity of polyacetylene, it has…
Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging…
We propose and analyze theoretically an approach for realizing a tunable optical phased-array antenna utilizing the properties of VO2 for electronic beam steering applications in the near-IR spectral range. The device is based on a 1D array…
Circuits provide ideal platforms of topological phases and matter, yet the study of topological circuits in the strongly nonlinear regime, has been lacking. We propose and experimentally demonstrate strongly nonlinear topological phases and…
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our…
Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers…
The electronic orders in magnetic and dielectric materials form the domains with different signs of order parameters. The control of configuration and motion of the domain walls (DWs) enables gigantic, nonvolatile responses against minute…