相关论文: Solid-State Electrochemical Thermal Transistors wi…
Recently, we reported the observation of superconductivity at ~0.5 K in a La2O2M4S6-type (M: metal) layered oxychalcogenide La2O2Bi3AgS6, which is a layered compound related to the BiS2-based superconductor system but possesses a thicker…
The charge transfer antiferromagnetic (T$_{N}$ =220 K) insulator EuNiO$_{3}$ undergoes, at ambient pressure, a temperature-induced metal insulator MI transition at T$_{MI}$=463 K. We have investigated the effect of pressure (up to p~20 GPa)…
The LaAlO3/SrTiO3 interface provides a unique platform for controlling the electronic properties of the superconducting semiconductor SrTiO3. Prior investigations have shown that two-dimensional superconductivity can be produced at the…
Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal…
Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can…
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be…
Transition metal dichalcogenide (TMD) alloys have attracted great interests in recent years due to their tunable electronic properties, especially the semiconductor-metal phase transition, along with their potential applications in…
The interface superconductivity in LaAlO$_{3}$-SrTiO$_{3}$ heterostructures reveals a non-monotonic behavior of the critical temperature as a function of the two-dimensional density of charge carriers. We develop a theoretical description…
The temperature (T) dependent x-ray diffraction (XRD) and resistivity measurements of La0.175Pr0.45Ca0.375MnO3 (LPCMO) have been performed down to 2K to understand the structural and transport properties. From room temperature down to 220K,…
We report thermal-expansion and specific-heat data of the series La_1-xCa_xCoO_3 for 0 <= x <= 0.3. For x = 0 the thermal-expansion coefficient alpha(T) features a pronounced maximum around T = 50 K caused by a temperature-dependent…
We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The switching voltage depends strongly on the thickness of the…
In the present study, we demonstrate a vacuum thermal switch based on near-field thermal radiation between phase transition materials, i.e., vanadium dioxide (VO2), whose phase changes from insulator to metal at 341 K. Similar modulation…
Using large scale molecular dynamics simulations, we study the thermal conductivity of bare and surface passivated silicon nanowires (SiNWs). For the cross-sectional widths $w \le 2$ nm, SiNWs become unstable because of the surface…
Thermal transistor is an efficient heat control device which can act as a heat switch as well as a heat modulator. In this paper, we study systematically one-dimensional and two-dimensional thermal transistors. In particular, we show how to…
Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing…
The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a…
We analyze the extended superfluid density data of Bo\v{z}ovi\'{c} \textit{ et al}. taken on homogenous thin films to explore the critical properties of the thermal (TSM) and quantum superconductor to metal (QSM) transitions in overdoped…
We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching…
Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and…
We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and…