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Cross-plane thermal conductivity in homogeneous transition metal dichalcogenides (TMDs) exhibits a strong dependence on twist angle, originating from atomic reconstruction within moir\'e superlattices. This reconstruction redistributes…

材料科学 · 物理学 2025-05-02 Wenwu Jiang , Ting Liang , Hekai Bu , Jianbin Xu , Wengen Ouyang

We present both time-averaged and time-resolved transport measurements of a two-dimensional electron (Wigner) crystal on the surface of superfluid helium confined in a narrow microchannel. We find that the field-current characteristics of…

强关联电子 · 物理学 2021-08-04 Shan Zou , David G. Rees , Denis Konstantinov

Low-dimensional materials have emerged as promising hosts for quantum emitters, whose emission typically arises from either strain-induced band bending or defect-induced two-level systems. Among these materials, transition metal…

量子物理 · 物理学 2026-05-19 Chanaprom Cholsuk , Sujin Suwanna , Tobias Vogl

We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation…

介观与纳米尺度物理 · 物理学 2009-11-13 I. L. Drichko , A. M. Dyakonov , I. Yu. Smirnov , A. V. Suslov , Y. M. Galperin , V. Vinokur , M. Myronov , O. A. Mironov , D. R. Leadley

Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction…

Monolayers of transition metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. High densities…

介观与纳米尺度物理 · 物理学 2018-08-08 D. Erben , A. Steinhoff , G. Schönhoff , T. O. Wehling , C. Gies , F. Jahnke

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…

A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…

强关联电子 · 物理学 2021-10-04 G. A. Canella , V. V. França

Increasing demands for renewable sources of energy has been a major driving force for developing efficient thermoelectric materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDC) have emerged as promising candidates for…

材料科学 · 物理学 2023-05-24 Sathwik Bharadwaj , Ashwin Ramasubramaniam , L. R. Ram-Mohan

We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the…

材料科学 · 物理学 2022-07-27 Yonglan Hu , Tie Yang , Dengfeng Li , Guangqian Ding , Chaochao Dun , Dandan Wu , Xiaotian Wang

Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in…

介观与纳米尺度物理 · 物理学 2016-02-10 Song-Lin Li , Kazihito Tsukagoshi , Emanuele Orgiu , Paolo Samorì

Transition metal dichalcogenides (TMDs) are a branch of two-dimensional materials which in addition to having an easy-to-exfoliate layered structure, also host semiconducting, metallic, superconducting, and topological properties in various…

超导电性 · 物理学 2023-01-25 Suvodeep Paul , Saswata Talukdar , Ravi Shankar Singh , Surajit Saha

Having the chiral anomaly induced magneto-transport phenomena extensively studied in single Weyl semimetal (WSM) as characterized by topological charge $n=1$, we here address the transport properties in the context of multi-Weyl semimetals…

介观与纳米尺度物理 · 物理学 2020-12-01 Tanay Nag , Snehasish Nandy

Exciton optical transitions in transition-metal dichalcogenides offer unique opportunities to study rich many-body physics. Recent experiments in monolayer WSe$_2$ and WS$_2$ have shown that while the low-temperature photoluminescence from…

材料科学 · 物理学 2016-08-23 Hanan Dery

Transition metal dichalcogenides are investigated for various applications at the nanoscale thanks to their unique combination of properties and dimensionality. For many of the anticipated applications, heat conduction plays an important…

Transition metal dichalcogenide (TMD) bilayers have recently emerged as a robust and tunable moir\'e system for studying and designing correlated electron physics. In this work, by combining large-scale first principle calculation and…

强关联电子 · 物理学 2020-12-30 Yang Zhang , Noah F. Q. Yuan , Liang Fu

2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit.…

材料科学 · 物理学 2025-04-24 Viet-Anh Ha , Feliciano Giustino

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of…

介观与纳米尺度物理 · 物理学 2014-01-21 Wenjuan Zhu , Tony Low , Yi-Hsien Lee , Han Wang , Damon B. Farmer , Jing Kong , Fengnian Xia , Phaedon Avouris

We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at…

介观与纳米尺度物理 · 物理学 2016-03-23 Tathagata Paul , Subhamoy Ghatak , Arindam Ghosh

Frustrated Mott insulators such as transition metal dichalcogenides present an ideal platform for the experimental realization of externally tuned insulator-metal transition. In this paper, we present the first nonperturbative numerical…

强关联电子 · 物理学 2022-06-14 Madhuparna Karmakar , Nyayabanta Swain