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One-dimensional nanoscale devices, such as semiconductor nanowires (NWs) and single- walled carbon nanotubes (SWNTs), have been intensively investigated because of their potential application of future high-speed electronic, optoelectronic,…

仪器与探测器 · 物理学 2014-10-27 B. H. Son , Jae-Ku Park , J. T. Hong , Ji-Yong. Park , Soonil. Lee , Y. H. Ahn

Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the…

We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission…

介观与纳米尺度物理 · 物理学 2012-12-24 Sunil Kumar , M. Khorasaninejad , M. M. Adachi , K. S. Karim , S. S. Saini , A. K. Sood

Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional material heterostructures. While this is achieved with independent top and bottom metallic gate…

Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the…

The ultrafast dynamics of charge carriers in solids plays a pivotal role in emerging optoelectronics, photonics, energy harvesting, and quantum technology applications. However, the investigation and direct visualization of such…

The coupling of light to electrical charge carriers in semiconductors is the foundation of many technological applications. Attosecond transient absorption spectroscopy measures simultaneously how excited electrons and the vacancies they…

材料科学 · 物理学 2023-05-03 Z. Schumacher , S. A. Sato , S. Neb , A. Niedermayr , L. Gallmann , A. Rubio , U. Keller

Carrier distribution and dynamics in semiconductor materials often govern their physical properties that are critical to functionalities and performance in industrial applications. The continued miniaturization of electronic and photonic…

The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image…

Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their…

材料科学 · 物理学 2023-05-09 J. E. Zimmermann , M. Axt , F. Mooshammer , P. Nagler , C. Schüller , T. Korn , U. Höfer , G. Mette

Bi2O2Se has attracted intensive attention due to its potential in electronics, optoelectronics, as well as ferroelectric applications. Despite that, there have only been a handful of experimental studies based on ultrafast spectroscopy to…

Ultrafast carrier dynamics in the topological insulator Bi2Se3 have recently been intensively studied using a variety of techniques. However, we are not aware of any successful experiments exploiting transient absorption (TA) spectroscopy…

介观与纳米尺度物理 · 物理学 2021-05-31 Yuri D. Glinka , Junzi Li , Tingchao He , Xiao Wei Sun

Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role…

Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the…

介观与纳米尺度物理 · 物理学 2022-01-05 R. Krause , S. Aeschlimann , M. Chavez-Cervantes , R. Perea-Causin , S. Brem , E. Malic , S. Forti , F. Fabbri , C. Coletti , I. Gierz

Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type…

There is strong interest in designing and realizing optically-active semiconductor nanostructures of greater complexity for applications in fields ranging from biomedical engineering to quantum computing. While these increasingly complex…

介观与纳米尺度物理 · 物理学 2026-05-25 Jill M. Cleveland , Tory A. Welsch , Eric Y. Chen , D. Bruce Chase , Matthew F. Doty , Hanz Y. Ramírez-Gómez

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects…

Understanding the electronic coupling and energy flow across layered two-dimensional heterostructures (HSs) is crucial to the exploitation of carrier and phonon transports as well as thermal management in next-generation optoelectronic…

介观与纳米尺度物理 · 物理学 2026-05-29 Md. Shaikot Alam Shakil , Ting-Hsuan Wu , Xing He , Abu Montakim Tareq , Zhenjia Zhou , Libo Gao , Naihao Chiang , Ding-Shyue Yang

Van der Waals (vdW) heterostructures, formed by stacking two-dimensional materials, offer highly tunable electronic and optical properties, with the twist angle between layers acting as a critical tuning parameter. While its impact on…

Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…

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