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The MALTA CMOS monolithic silicon pixel sensors has been developed in the Tower 180 nm CMOS imaging process. It includes an asynchronous readout scheme and complies with the ATLAS inner tracker requirements for the HL-LHC. Several 4-chip…

This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve…

The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30um x 37.5um and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a…

仪器与探测器 · 物理学 2022-12-21 Katharina Dort

Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\mu$m, produced at CiS, and 100-200 $\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and…

仪器与探测器 · 物理学 2015-06-23 S. Terzo , A. Macchiolo , R. Nisius , B. Paschen

MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The sensing element is a deep n-well/p-substrate diode without…

A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…

The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of high resolution, low material, fast readout and low power. The Monolithic Active Pixel Sensor (MAPS) technology has been…

仪器与探测器 · 物理学 2021-09-21 T. Wu , S. Grinstein , R. Casanova , Y. Zhang , W. Wei , X. Wei , J. Dong , L. Zhang , X. Li , Z. Liang , J. Guimaraes da Costa , W. Lu , L. Li , J. Wang , R. Zheng , P. Yang , G. Huang

In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial…

Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and…

The ATLAS experiment will undergo around the year 2025 a replacement of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) with a new 5-layer pixel system. Thin planar pixel sensors are promising candidates to…

仪器与探测器 · 物理学 2017-02-01 Anna Macchiolo , Julien Beyer , Alessandro La Rosa , Richard Nisius , Natascha Savic

To cope with the higher occupancy and radiation damage at the HL-LHC also the LHC experiments will be upgraded. The ATLAS Planar Pixel Sensor R&D Project (PPS) is an international collaboration of 17 institutions and more than 80…

仪器与探测器 · 物理学 2019-08-14 Philipp Weigell

High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50$\mu m$ x 150$\mu m$, fabricated using TSI 180nm HV-CMOS technology, is a full reticle-size…

仪器与探测器 · 物理学 2025-02-18 F. Ustuner , R. Zanzottera , A. Andreazza , R. Dong , H. Fox , Y. Gao , P. Gheewalla , B. Masic , L. Meng , I. Peric , F. Sabatini

The physics aims at the proposed future CLIC high-energy linear $e^+ e^-$ collider pose challenging demands on the performance of the detector system. In particular the vertex and tracking detectors have to combine precision measurements…

仪器与探测器 · 物理学 2019-09-04 Mathieu Benoit

To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the…

We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…

A novel design for a silicon-tungsten electromagnetic calorimeter is described, based on Monolithic Active Pixel Sensors (MAPS). A test sensor with a pixel size of 50x50 um2 has been fabricated in July 2007. The simulation of the physical…

Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages…

We report initial results from the design and evaluation of two pixellated PIN Cadmium Zinc Telluride detectors and an ASIC-based readout system. The prototype imaging PIN detectors consist of 4X4 1.5 mm square indium anode contacts with…

天体物理学 · 物理学 2015-06-24 T. Narita , P. Bloser , J. Grindlay , R. Sudharsanan , C. Reiche , C. Stenstrom

For large scale applications, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the state of the art in pixel detector technology to date. They have been developed and start to be used as tracking…

仪器与探测器 · 物理学 2010-01-22 Norbert Wermes

This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in…