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相关论文: First-principles Study of Carrier Mobility in MX (…

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Ideal two-dimensional (2D) semiconductors with high mobility comparable to three-dimensional (3D) Si or GaAs are still lacking, hindering the development of high-performance 2D devices. Here in this work, using first-principles calculations…

材料科学 · 物理学 2022-04-26 Shiru Song , Shixu Liu , Yuting Sun , Ji-Hui Yang , Xin-Gao Gong

Two-dimensional materials with a proper band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolayer $\mathrm{TlP_5}$, which is dynamically and…

The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the…

介观与纳米尺度物理 · 物理学 2015-06-12 Xiaodong Li , Jeffrey T. Mullen , Zhenghe Jin , Kostyantyn M. Borysenko , M. Buongiorno Nardelli , Ki Wook Kim

We calculated the electron mobility of 14 two dimensional semiconductors with composition of MX$_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation…

材料科学 · 物理学 2016-10-04 Zhishuo Huang , Wenxu Zhang , Wanli Zhang , Yanrong Li

It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work,…

材料科学 · 物理学 2022-04-26 Shiru Song , Ji-Hui Yang , Xin-Gao Gong

Intrinsic electron- and hole-phonon interactions are investigated in monolayer transition metal dichalcogenides MX$_2$ (M=Mo,W; X=S,Se) based on a density functional theory formalism. Due to their structural similarities, all four materials…

介观与纳米尺度物理 · 物理学 2015-06-22 Zhenghe Jin , Xiaodong Li , Jeffrey Thomas Mullen , Ki Wook Kim

Lead and tin chalcogenides have been studied widely due to their promising thermoelectric (TE) properties. Further enhancement in their TE efficiency has been reported upon the reduction of the dimension, which is an important feature in…

材料科学 · 物理学 2020-10-14 Abhiyan Pandit , Bothina Hamad

The extraordinary properties and the novel applications of black phosphorene induce the research interest on the monolayer group-IV monochalcogenides. Here using the first-principles calculations, we systematically investigate the…

材料科学 · 物理学 2017-12-27 Yuanfeng Xu , Hao Zhang , Hezhu Shao , Gang Ni , Hongliang Lu , Rongjun Zhang , Bo Peng , Yongyuan Zhu , Heyuan Zhu

Monolayer group-III monochalcogenides (MX, M = Ga, In; X = S, Se, Te), an emerging category of two-dimensional (2D) semiconductors, hold great promise for electronics, optoelectronics and catalysts. By first-principles calculations, we show…

材料科学 · 物理学 2018-05-11 Si Zhou , Cheng-Cheng Liu , Jijun Zhao , Yugui Yao

The influence of an external electric field on single-layer transition-metal dichalcogenides TX2 with T = Mo, W and X = S, Se (MoWSeS) have been investigated by means of density-functional theory within two-dimensional periodic boundary…

材料科学 · 物理学 2017-09-13 Nourdine Zibouche , Pier Philipsen , Thomas Heine , Agnieszka Kuc

We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to…

材料科学 · 物理学 2016-06-17 A. N. Rudenko , S. Brener , M. I. Katsnelson

The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

介观与纳米尺度物理 · 物理学 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we…

材料科学 · 物理学 2014-07-08 Jingsi Qiao , Xianghua Kong , Zhi-Xin Hu , Feng Yang , Wei Ji

Within the framework of Boltzmann equation, we present a $\mathbf{k\cdot p}$ theory based study for the low-field mobilities of InSb nanowires (InSb NWs) with relatively large cross sectional sizes (with diameters up to 51.8 nm). For such…

介观与纳米尺度物理 · 物理学 2017-06-02 Wei Feng , Chen Peng , Shuang Li , Xin-Qi Li

In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct…

材料科学 · 物理学 2021-09-22 Shoeib Babaee Touski , Nayereh Ghobadi

Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising…

计算物理 · 物理学 2020-05-20 Shasha Wei , Cong Wang , Guoying Gao

Tin monoxide is an interesting two-dimensional material because of the rare oxide semiconductor with bipolar conductivity. However, the lower room temperature mobility limits the applications of SnO in the future. Thus, we systematically…

材料科学 · 物理学 2019-09-04 Yanfeng Ge , Yong Liu

Two-dimensional (2D) semiconductors have demonstrated great potential for next-generation electronics and optoelectronics. An important property for these applications is the phonon-limited charge carrier mobility. The common approach to…

材料科学 · 物理学 2022-10-05 Chenmu Zhang , Yuanyue Liu

Based on density functional theory (DFT), we performed first-principle studies on the electronic structure, magnetic state and optical properties of two-dimensional (2D) transition-metal phosphorous trichalcogenide MnPX$_3$ (X=S and Se).…

材料科学 · 物理学 2021-12-23 Juntao Yang , Yong Zhou , Qilin Guo , Yuriy Dedkov , Elena Voloshina

Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP)…

介观与纳米尺度物理 · 物理学 2015-05-13 Vasili Perebeinos , Slava Rotkin , Alexey G. Petrov , Phaedon Avouris
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