相关论文: Ultra-fast Waveguide MUTC Photodiodes over 220 GHz
The accelerating demand for wireless communication necessitates wideband, energy-efficient photonic sub-terahertz (sub-THz) sources to enable ultra-fast data transfer. However, as critical components for THz photonic mixing, photodiodes…
Current wireless communication systems are increasingly constrained by insufficient bandwidth and limited power output, impeding the achievement of ultra-high-speed data transmission. The terahertz (THz) range offers greater bandwidth, but…
With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices,…
A novel uni-traveling-carrier photodetector (UTC-PD) structure with an integrated focusing-reflection (FR) mirror realized by a non-periodic concentric circular high-contrast grating (NP-CC-HCG), referred to as FR-UTC-PD, is proposed to…
Uni-traveling-carrier photodiodes (UTC-PDs), which utilize only electrons as the active carriers, have become indispensable in high-speed optoelectronics due to their unique capabilities, such as high saturation power and broad bandwidth.…
We utilize and characterize high-power, high-linearity modified uni-traveling carrier (MUTC) photodiodes for low-phase-noise photonic microwave generation based on optical frequency division. When illuminated with picosecond pulses from a…
The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the…
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic…
Current optical communication system operating at 1.55 {\mu}m wavelength band may not be able to continually satisfy the growing demand on the data capacity within the next few years. Opening a new spectral window at around 2 {\mu}m…
Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power levels as…
Simple analytical expressions for estimation of second order output intercept point (OIP2) and third order output intercept point (OIP3) of surface normal uni-traveling carrier (UTC) and modified uni-traveling carrier (MUTC) photodiode (PD)…
Slow light propagation in structured materials is a highly promising approach for realizing on-chip integrated photonic devices based on enhanced optical nonlinearities. One of the most successful research avenues consists in engineering…
Multimode interference couplers are a fundamental building block in many integrated photonic systems, ranging from high-speed coherent receivers to quantum splitters. However, their basic structure has remained fundamentally unchanged for…
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…
We design and fabricate shallow-etched periodically poled lithium niobate waveguide to realize highly-efficient broadband spontaneous parametric down-conversion~(SPDC) on nanophotonic chip. The shallow-etched waveguide is capable to…
Advances in silicon (Si) photonics at submicrometer wavelengths are unlocking new opportunities to realize miniaturized, scalable optical systems for biophotonics, quantum information, imaging, spectroscopy, and displays. Addressing this…
The future interconnect links in intra- and inter-chip require the photodetector with high bandwidth, ultra-wide waveband, compact footprint, low-cost, and compatible integration process with silicon complementary metal-oxide-semiconductor…
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production…