相关论文: Design and Optimization of a Graphene-On-Silicon N…
An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower…
The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we…
In order to overcome the challenge of obtaining high modulation depth due to weak graphene-light interaction, a graphene-on-silicon nitride (SiNx) microring resonator based on graphene's gate-tunable optical conductivity is proposed and…
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation…
Graphene has emerged as an ultrafast photonic material for on-chip all-optical modulation. However, its atomic thickness limits its interaction with guided optical modes, which results in a high switching energy per bit or low modulation…
The 2-{\mu}m waveband, emerging as a highly promising candidate for optical communication, offers an extended wavelength window for high-speed optical transmission. Despite its potential, the development of integrated electro-optic (E/O)…
Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through…
Graphene has generated exceptional interest as an optoelectronic material because its high carrier mobility and broadband absorption promise to make extremely fast and broadband electro-optic devices possible. Electro-optic graphene…
For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
We observe a strong polarization dependent optical loss of in-plane light propagation in silicon waveguide due to the presence of graphene. Both transverse-electric (TE) and transverse-magnetic (TM) modes are efficiently (~3 dB) coupled to…
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a…
Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon…
Electro-optic (E/O) modulators are crucial for optical communication but face a trade-off between modulation bandwidth and efficiency. A small footprint could reduce the capacitance and increase the bandwidth, however, this usually results…
With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous…
We propose and discuss terahertz electro-absorption modulators based on graphene plasmonic structures. The active device consists of a self-gated pair of graphene layers, which are patterned to structures supporting THz plasmonic…
In this paper, four easy-to-fabricate graphene-based Si waveguide modulators are presented to overcome the strong polarization dependency of graphene-based modulators. The modulation features of two newly proposed structures, i.e. two…
Fast modulation and switching of light at visible and near-infrared (vis-NIR) frequencies is of utmost importance for optical signal processing and sensing technologies. No fundamental limit appears to prevent us from designing…
Silicon nitride (SiN) is currently the most prominent platform for photonics at visible and near-IR wavelength bandwidth. However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains…