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Using the Density Matrix Renormalization Group and two-leg ladders, we investigate an electronic two-orbital Hubbard model including plaquette diagonal hopping amplitudes. Our goal is to search for regimes where charges added to the undoped…

强关联电子 · 物理学 2015-05-18 J. C. Xavier , G. Alvarez , A. Moreo , E. Dagotto

The two-dimensional Holstein-Hubbard model is studied by means of continuous-time quantum Monte Carlo simulations. Using renormalization-group-invariant correlation ratios and finite-size extrapolation, the critical temperature of the…

强关联电子 · 物理学 2018-08-06 Manuel Weber , Martin Hohenadler

We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an…

强关联电子 · 物理学 2009-11-11 Yun Song , Liang-Jian Zou

Demonstrating superconductivity in purely repulsive Hubbard models is a compelling goal which underscores the counter-intuitive ability of Coulomb interactions to mediate superconductivity. Here, we present numerical evidence for robust…

强关联电子 · 物理学 2025-09-04 Clemens Kuhlenkamp , Stefan Divic , Michael P. Zaletel , Tomohiro Soejima , Ashvin Vishwanath

In this work, we address the question of calculating the local effective Coulomb interaction matrix in materials with strong electronic Coulomb interactions from first principles. To this purpose, we implement the constrained random phase…

强关联电子 · 物理学 2012-10-22 Loig Vaugier , Hong Jiang , Silke Biermann

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

We study a magnetic impurity embedded in a correlated electron system using the density-matrix renormalization group method. The correlated electron system is described by the one-dimensional Hubbard model. At half filling, we confirm that…

强关联电子 · 物理学 2007-05-23 S. Nishimoto , P. Fulde

Strongly interacting Dirac semimetals are investigated using a holographic model especially geared to compute the single-particle correlation function for this case, including both interaction effects and nonzero temperature. We calculate…

强关联电子 · 物理学 2014-07-11 V. P. J. Jacobs , S. J. G. Vandoren , H. T. C. Stoof

We present the zero-temperature phase diagram of the one-dimensional t2g-orbital Hubbard model, obtained using the density-matrix renormalization group and Lanczos techniques. Emphasis is given to the case for the electron density n=5…

强关联电子 · 物理学 2009-11-11 Jose Xavier , Hiroaki Onishi , Takashi Hotta , Elbio Dagotto

Monolayer 1T-TaS$_2$ hosts a star-of-David charge-density wave (CDW) that stabilizes a low-temperature Mott-insulating state. Recent time-resolved spectroscopies indicate a coupling between the CDW amplitude mode and the electronic…

强关联电子 · 物理学 2026-04-29 Niklas Notter , Markus Aichhorn , Anna Galler

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

Identifying materials hosting an excitonic insulator ground state has been one of the major pursuits in condensed matter physics in recent years. Promising candidates in transition metal chalcogenide compounds (TMC), including…

强关联电子 · 物理学 2026-03-20 Yao Zeng , Shi-Cong Mo , Wéi Wú

We study non-local correlations in a three-orbital Hubbard model defined on an extended one-dimensional chain using determinant quantum Monte Carlo and density matrix renormalization group methods. We focus on a parameter with robust Hund's…

强关联电子 · 物理学 2016-12-13 Shaozhi. Li , N. Kaushal , Y. Wang , Y. Tang , G. Alvarez , A. Nocera , T. A. Maier , E. Dagotto , S. Johnston

We study the charge-density dynamics within the two-dimensional extended Hubbard model in the presence of long-range Coulomb interaction across the metal-insulator transition point. To take into account strong correlations we start from…

强关联电子 · 物理学 2014-12-24 E. G. C. P. van Loon , H. Hafermann , A. I. Lichtenstein , A. N. Rubtsov , M. I. Katsnelson

Strongly correlated systems exhibit intriguing properties caused by intertwined microscopic in- teractions that are hard to disentangle in equilibrium. Employing non-equilibrium time-resolved photoemission spectroscopy on the…

We study the one-band Hubbard model at half filling with hopping asymmetry and its effective model at finite but large U up to the second order of tmix/U. Two variational wave functions, the resonating valence bond (RVB) wave function and…

强关联电子 · 物理学 2007-05-23 Yuchuan Wen , Yue Yu

Many strongly correlated systems exhibit strange metallic behavior in certain parameter regimes characterized by anomalous transport properties that are irreconcilable with a Fermi-liquid-like description in terms of quasiparticles. The…

强关联电子 · 物理学 2024-10-29 Andrew A. Allocca

We study the photo-excitation dynamics of correlated band insulators, using non-equilibrium dynamical mean-field theory for the ionic Hubbard model. We find two distinct behaviors, depending on the ratio of the on-site interaction $U$ and…

强关联电子 · 物理学 2018-07-18 Nagamalleswararao Dasari , Martin Eckstein