相关论文: Understanding disorder in Silicon quantum computin…
A disorder-averaged Hartree-Fock treatment is used to compute the density of single particle states for quantum Hall systems at filling factor $\nu=1$. It is found that transport and spin polarization experiments can be simultaneously…
The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…
A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g.,…
Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge (2000 cm^2/Vs), two adjacent neighbours in the group IV…
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing these nuclear spin-full isotopes is essential to extend the…
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on…
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering…
Our previous understanding of transport in disordered system depends on the assumption that there is a well-defined Fermi velocity. The Fermi velocity determines important length scales in the system such as the diffusion length and…
Symmetries and quantum anomalies serve as powerful tools for constraining complicated quantum many-body systems, offering valuable insights into low-energy characteristics based on their ultraviolet structure. Nevertheless, their…
The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At…
Rashba spin-orbit coupling appears in 2D systems lacking inversion symmetry, and causes the spin-splitting of otherwise degenerate energy bands into an upper and lower helicity band. In this paper, we explore how impurity scattering affects…
The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting…
The semi-classical Bloch-Boltzmann theory is at the heart of our understanding of conduction in solids, ranging from metals to semi-conductors. Physical systems that are beyond the range of applicability of this theory are thus of…
In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting to prevent fast qubit relaxation. In this work, we study in detail how the valley splitting depends on the electric and magnetic fields as…
Two recent electronic transport experiments from Columbia University and Harvard University have reported record high mobility and low channel densities in transition metal dichalcogenide (TMD) WSe$_2$ monolayers [J. Pack, et al.,…
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for…
The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave…
Coherent quantum phenomena can only emerge when decoherence is minimized, and mastery over decoherence is technologically crucial for designing and operating functional quantum devices. However, its microscopic mechanisms in…
One-dimensional electron systems interacting with long-range Coulomb forces (quantum wires) show a Wigner crystal structure. We investigate in this paper the transport properties of such a Wigner crystal in the presence of impurities.…