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Rhombohedral multilayer graphene hosts a rich landscape of correlated symmetry-broken phases, driven by strong interactions from its flat band edges. Aligning to hexagonal boron nitride (hBN) creates a moir\'e pattern, leading to recent…

The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to…

材料科学 · 物理学 2015-05-13 Paola Gava , Michele Lazzeri , A. Marco Saitta , Francesco Mauri

When monolayer graphene is crystallographically aligned to hexagonal boron nitride (BN), a moir\'e superlattice is formed, producing characteristic satellite Dirac peaks in the electronic band structure. Aligning a second BN layer to…

The emerging interest in van der Waals heterostructures as new materials for opto-electronics and photonics poses questions about their stability and structure-property relations. In the framework of density-functional and many-body…

Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic doping is an effective means to induce emergent phenomena. In bilayer graphene with an interlayer twist angle near the…

Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van…

Manipulating electron quantum 1D channels is an important element in the field of quantum information due to their ballistic and phase coherence properties. In GaAs and graphene based two dimensional gas systems, these edge channels have…

介观与纳米尺度物理 · 物理学 2025-11-04 Won Beom Choi , Myungjin Jeon , K. Watanabe , T. Taniguchi , Joonho Jang

Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of…

介观与纳米尺度物理 · 物理学 2015-03-19 Adrien Allain , Zheng Han , Vincent Bouchiat

We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight binding calculations. All major spectral features corresponding to the expected interband transitions are…

强关联电子 · 物理学 2009-11-13 A. B. Kuzmenko , E. van Heumen , D. van der Marel , P. Lerch , P. Blake , K. S. Novoselov , A. K. Geim

At large commensurate angles, twisted bilayer graphene which holds even parity under sublattice exchange exhibits a tiny gap. Here, we point out a way to tune this tiny gap into a large gap. We start from comprehensive understanding of the…

介观与纳米尺度物理 · 物理学 2024-03-22 Xiu-Cai Jiang , Yi-Yuan Zhao , Yu-Zhong Zhang

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to…

Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and…

介观与纳米尺度物理 · 物理学 2021-04-21 David Andres Galeano Gonzalez , Bheema Lingam Chittari , Youngju Park , Jin-Hua Sun , Jeil Jung

Ab-initio density functional perturbation theory (DFPT) has been employed to study thermodynamical properties of pure and doped graphene sheet and the results have been compared with available theoretical and experimental data. The…

介观与纳米尺度物理 · 物理学 2020-05-22 Sarita Mann , Pooja Rani , Ranjan Kumar , Girija S. Dubey , V. K. Jindal

The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a…

介观与纳米尺度物理 · 物理学 2019-01-18 Adolfo De Sanctis , Jake D. Mehew , Saad Alkhalifa , Freddie Withers , Monica F. Craciun , Saverio Russo

Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes…

Monolayer graphene placed with a twist on top of AB-stacked bilayer graphene hosts topological flat bands in a wide range of twist angles. The dispersion of these bands and gaps between them can be efficiently controlled by a perpendicular…

强关联电子 · 物理学 2020-08-05 Louk Rademaker , Ivan Protopopov , Dmitry Abanin

Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of…

材料科学 · 物理学 2014-11-05 Qingyun Wu , Lei Shen , Zhaoqiang Bai , Minggang Zeng , Ming Yang , Zhigao Huang , Yuan Ping Feng

We calculate the theoretical contribution to the doping and temperature ($T$) dependence of electrical resistivity due to scattering by acoustic phonons in Bernal bilayer graphene (BBG) and rhombohedral trilayer graphene (RTG). We focus on…

介观与纳米尺度物理 · 物理学 2023-01-31 Seth M. Davis , Yang-Zhi Chou , Fengcheng Wu , Sankar Das Sarma

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve…

The ability to tune the energy gap in bilayer graphene makes it the perfect playground for the study of the effects of internal electric fields, such as the crystalline field, which are developed \Reb{when other layered materials are…

介观与纳米尺度物理 · 物理学 2025-02-21 L. S. Farrar , G. Maffione , V. -H. Nguyen , K. Watanabe , T. Taniguchi , J. -Ch. Charlier , D. Mailly , R. Ribeiro-Palau