相关论文: Vector beam generation from standing hollow GaN na…
We propose a method for generating hollow beams using higher-order cylindrical vector modes of the form R-TEMpl, where the radial index p is varied from 1 to 3 while the azimuthal index is fixed at l = 1. It is found that this scheme…
We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device…
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings…
We describe the operation of two GaN-based diode lasers for the laser spectroscopy of gallium at 403 nm and 417 nm. Their use in an external cavity configuration enabled the investigation of absorption spectroscopy in a gallium hollow…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
We designed a gallium nitride hexagonal hollow nanowire whispering gallery mode cavity that generates an |m|=6 topological light with orbital angular momentum (OAM). OAM is generated by breaking the cross-sectional mirror symmetry of the…
Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nucleation layer is electrically conductive and optically…
Harnessing the spontaneous emission of incoherent quantum emitters is one of the hallmarks of nano-optics. Yet, an enduring challenge remains-making them emit vector beams, which are complex forms of light associated with fruitful…
Vector vortex beams are a class of optical beams with singularities in their space-variant polarization. Vector vortex beam lasers have applications in many areas including imaging and communication, where vertical-cavity lasers emitting…
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…
In this manuscript, we propose the generation of complex vector beams with high quality and stability based on a novel approach that relies on the combination of two techniques that seem incompatible at first glance. The first is Complex…
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional…
We propose a novel method to generate vector beams in planar photonic crystal cavities with multiple missing-hole defects. Simulating the resonant modes in the cavities, we observe that the optical fields in each defect have different phase…
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and…
Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with trimethylgallium and ammonia as precursors. We studied the…
Cylindrical vector vortex (CVV) beams, complex light fields that exhibit a vector nature and carry quantized orbital angular momentum states, have been widely investigated due to their rich applications. Current technologies to generate CVV…
Optical beams carrying orbital angular momentum (OAM) can find tremendous applications in several fields. In order to apply these particular beams in photonic integrated devices innovative optical elements have been proposed. Here we are…
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 {\deg}C. In contrast to previous…
Ion beam irradiation of semiconductors is a method to produce regular periodic nanoscale patterns self-organized on wafer scale. At low temperatures, the surface of semiconductors is typically amorphized by the ion beam. Above a material…
Femtosecond laser-writing offers distinct capabilities for fabrication, including three-dimensional, multi-material, and sub-diffraction-limited patterning. In particular, demonstrations of laser-written quantum emitters and photonic…