相关论文: Resonant tunneling and quantum interference of a t…
The spin-phase interference effects are studied analytically in resonant quantum tunneling of the N\'{e}el vector between degenerate excited levels in nanometer-scale single-domain antiferromagnets in the absence of an external magnetic…
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an…
When a constriction is realized in a 2D quantum spin Hall system, electron tunneling between helical edge states occurs via two types of channels allowed by time-reversal symmetry, namely spin-preserving ({p}) and spin-flipping ({f})…
Coupled spin evolution and tunneling together with the relaxation and decoherence effects are studied for the double quantum dot formed in a semiconductor nanowire and driven by the periodic electric field. Such system represents a model of…
A quantum dot with spin-orbit interaction can work as an efficient spin filter if it is connected to N (> 2) external leads via tunnel barriers. When an unpolarized current is injected to a quantum dot from a lead, polarized currents are…
We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra…
We investigate a hybrid quantum system involving spin qubits, based on the spins of electrons confined in quantum dots, and topological qubits, based on Majorana fermions. In such a system, gated control of the charge on the quantum dots…
A single electron shared between two levels threaded by a magnetic flux is an irreducibly simple quantum system in which interference is predicted to occur. We demonstrate tuning of the tunnel coupling between two such electronic levels…
Understanding quantum tunneling in many-body systems is crucial for advancing quantum technologies and nanoscale device design. Despite extensive studies of quantum tunneling, the role of interactions in determining directional transport…
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin…
We utilize electron counting techniques to distinguish a spin conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot…
A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin…
We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit…
We consider the resonant tunneling through a multi-level system. It is demonstrated that the resonant current displays quantum interference effects due to a possibility of tunneling through different levels. We show that the interference…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
The possibility of quantum oscillations of the tunnel conductance and magnetoresistance induced by spin-wave excitations in a ferromagnet-ferromagnet-ferromagnet double barrier tunnel junction, when the magnetizations of the two side…
We present a theoretical analysis of the capacitance of a double quantum dot in the charge and spin qubit configurations probed at high-frequencies. We find that in general the total capacitance of the system consists of two state-dependent…
We theoretically investigate the tunneling-induced transparency (TIT) and the Autler-Townes (AT) doublet and triplet in a triple-quantum-dot system. For the resonant tunneling case, we show that the TIT induces a transparency dip in a…
Resonant tunneling through semimetallic ErAs quantum wells embedded in GaAs structures with AlAs barriers was recently found to exhibit an intriguing behavior in magnetic fields which is explained in terms of tunneling selection rules and…