相关论文: Multifield tunable valley splitting in two-dimensi…
The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means.…
The search for two-dimensional materials with exotic valley-dependent properties has attracted rapid attention as they are fundamentally intriguing and practically appealing for nanoscale device applications. Here, using first-principles…
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for…
Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides…
Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials with the joint spatial inversion and time-reversal (PT)…
Monolayer transition-metal dichalcogenides possess a pair of degenerate helical valleys in the band structure that exhibit fascinating optical valley polarization. Optical valley polarization, however, is limited by carrier lifetimes of…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…
We propose a mechanism where the valley splitting is caused by an in-plane electric polarization and the coupling between the two makes it possible for an electric field to control the valley degree of freedom. We demonstrate this by…
While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…
Valley-based topological phases offer a wealth of exotic quantum states with tunable functionalities, driven by the valley degree of freedom. In this work, by constructing heterostructures of germanene (silicene, stanene) on various…
Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…
Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to…
A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this…
Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic…
Two-dimensional magnetism and valleys have recently emerged as two significant research areas, with intriguing properties and practical uses in advanced information technology. Considering the importance of these two areas and their…
We show that the MXene Ta$_2$CS$_2$ provides an excellent platform for hosting multiple coupled degrees of freedom, viz., valley, spin, orbital, and layer. The interplay among these degrees of freedom gives rise to a range of intriguing…
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley (FV) semiconductor and half-valley-metal (HVM) have been proposed, which possess intrinsic spontaneous valley polarization. Here, we propose the concept…
Altermagnets represent a newly identified third class of collinear magnets and have recently emerged as a focal point in condensed matter physics. In this work, through first-principles calculations and theoretical analysis, we identify…