相关论文: A ballistic electron source with magnetically-cont…
Low-energy excitations in graphene exhibit relativistic properties due to the linear dispersion relation close to the Dirac points in the first Brillouin zone. Two of the Dirac points located at opposite corners of the first Brillouin zone…
We derive the angular generation density of photoexcited carriers in gapless and gapped Bernal bilayer graphene. Exploiting the strong anisotropy of the band structure of bilayer graphene at low energies due to trigonal warping, we show…
Electron and hole Bloch states in gapped bilayer graphene exhibit topological orbital magnetic moments with opposite signs near the band edges, which allows for tunable valley-polarization in an out-of-plane magnetic field. This intrinsic…
Closing the gap between ray tracing simulations and experimentally observed electron jetting in bilayer graphene (BLG), we study all-electronic, gate-defined BLG cavities using tight-binding simulations and semiclassical equations of…
The valley degeneracy of electron states in graphene stimulates intensive research of valley-related optical and transport phenomena. While many proposals on how to manipulate valley states have been put forward, experimental access to the…
We study the electron transmission through the domain boundary on bilayer graphene separating AB and BA stacking regions. Using the effective continuum model, we calculate the electron transmission probability as a function of the electron…
Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that…
We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to an intricate pattern of lifted and restored degeneracies…
Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1{\deg}. At small bias voltages, the tunneling occurs with…
Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite…
We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index…
Quantum transport calculations describing electron scattering off an extended line defect in graphene are presented. The calculations include potentials from local magnetic moments recently predicted to exist on sites adjacent to the line…
The effective theory for bilayer graphene (BLG), subject to parallel/in-plane magnetic fields, is derived. With a sizable magnetic field the trigonal warping becomes irrelevant, and one ends up with two Dirac points in the vicinity of each…
Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…
Electrons in two-dimensional hexagonal materials have valley degree of freedom, which can be used to encode and process quantum information. The valley-selective excitations, governed by the circularly polarised light resonant with the…
In two-dimensional materials where interacting Fermi pockets occur in valleys related by time-reversal symmetry, a spontaneous valley imbalance results in a novel state known as an orbital magnet. Due to the breaking of time-reversal…
We theoretically investigate the interaction of an ultrastrong femtosecond-long linearly polarized optical pulse with AB-stacked bilayer graphene. The pulse excite electrons from the valence into the conduction band, resulting in finite…
Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…
We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…
We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be electrostatically defined when the gate voltages applied to…