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We report a first-principles study on the tunnel magnetoresistance (TMR) and spin-injection efficiency (SIE) through phosphorene with nickel electrodes under the mechanical tension and bending on the phosphorene region. Both the TMR and SIE…

材料科学 · 物理学 2016-10-10 Mingyan Chen , Zhizhou Yu , Yiqun Xie , Yin Wang

Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic…

介观与纳米尺度物理 · 物理学 2016-11-08 D. MacNeill , G. M. Stiehl , M. H. D. Guimaraes , R. A. Buhrman , J. Park , D. C. Ralph

The manipulation of antiferromagnetic (AFM) order is a central theme in modern spintronics. In this work, we achieve reliable switching of the chiral AFM state in the Weyl antiferromagnet Mn$_3$Sn using a heat pulse combined with a very…

材料科学 · 物理学 2026-05-25 Xiaokang Li , Jing Zhang , Xiaodong Guo , Zengwei Zhu

Fe pnictides and related materials have been a topic of intense research for understanding the complex interplay between magnetism and superconductivity. Here we report on the magnetic structure of SrMn$_{2}$As$_{2}$ that crystallizes in a…

As electrical control of N\'eel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to…

We demonstrate a deterministic switching mechanism in collinear altermagnets driven by asymmetric sublattice spin currents. Unlike conventional antiferromagnets, where combined parity-time-reversal symmetry enforces purely staggered…

介观与纳米尺度物理 · 物理学 2025-10-14 Sayan Sarkar , Sunit Das , Amit Agarwal

The anomalous Hall effect (AHE), typically observed in ferromagnetic (FM) metals with broken time-reversal symmetry, depends on electronic and magnetic properties. In Co$_{3}$Sn$_{2-x}$In$_{x}$S$_{2}$, a giant AHE has been attributed to…

Antiferromagnetic (AFM) skyrmions, which are resistant to both the skyrmion Hall effect and external magnetic perturbations, are expected to be promising candidates for next-generation spintronics devices. Despite being observed in bulk…

介观与纳米尺度物理 · 物理学 2024-05-16 Weiyi Pan , Zhiming Xu

Transition metal molybdenum oxides A2Mo3O8 (A= Mn, Fe, Co) are known to be polar magnets where A ions are located in either octahedrally or tetrahedrally coordinated sites. In this paper we predict that their polarizations can be reversed…

材料科学 · 物理学 2025-03-18 Yaxin Gao , Sha Li , Menghao Wu

Antiferromagnetic materials are promising platforms for next-generation spintronics owing to their fast dynamics and high robustness against parasitic magnetic fields. However, nanoscale imaging of the magnetic order in such materials with…

The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…

介观与纳米尺度物理 · 物理学 2022-11-01 D. J. P. de Sousa , P. M. Haney , J. P. Wang , Tony Low

Antiferromagnets (AFMs) with anomalous quantum responses have lead to new progress for the understanding of their magnetic and electronic structures from symmetry and topology points of view. Two typical topological states are the collinear…

材料科学 · 物理学 2023-06-14 Jie Zhan , Jiangxu Li , Wujun Shi , Xing-Qiu Chen , Yan Sun

Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics. Current…

材料科学 · 物理学 2015-06-25 X. Martí , I. Fina , T. Jungwirth

Spintronic artificial neurons are intriguing building blocks for energy efficient Neuromorphic Computing (NC). Nevertheless, most contemporary implementations rely on symmetry breaking external in plane magnetic fields (H_X) for neuron…

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…

Spintronics has advanced through discoveries of various electrically-driven spin dynamics in nanomagnets. Here, we report a novel switching dynamics of spin systems driven by spin-orbit torque, using a noncollinear antiferromagnetic…

介观与纳米尺度物理 · 物理学 2026-05-19 Yuma Sato , Yutaro Takeuchi , Yuta Yamane , Shun Kanai , Shunsuke Fukami

Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but…

应用物理 · 物理学 2019-05-01 In Jun Park , Taehwan Lee , Protik Das , Bishwajit Debnath , Greg P. Carman , Roger K. Lake

The nuclear magnetic resonance (NMR) spectrum of spin-3/2 nuclei in a static magnetic field aligned with one of the electric field gradient (EFG) principal axes is developed analytically, based on fictitious spin-1/2 formalism. Compact…

超导电性 · 物理学 2024-12-17 Jaafar N. Ansari , Karen L. Sauer

Spintronics, a transformative field of research, leverages the spin of electron to revolutionize electronic devices, offering significant advantages over traditional charge-based systems. This chapter highlights the critical role of novel…

材料科学 · 物理学 2025-02-03 A. Sud , A. Kumar , M. Cubukcu
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