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Ultrafast charge transfer processes provide a facile way to create interlayer excitons in directly contacted transition metal dichalcogenide (TMD) layers. More sophisticated heterostructures composed of TMD/hBN/TMD enable new ways to…

介观与纳米尺度物理 · 物理学 2023-01-12 Yoseob Yoon , Zuocheng Zhang , Ruishi Qi , Andrew Y. Joe , Renee Sailus , Kenji Watanabe , Takashi Taniguchi , Sefaattin Tongay , Feng Wang

The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a…

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects…

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…

仪器与探测器 · 物理学 2021-03-02 Zhijuan Xu , Shisheng Lin , Xiaoqiang Li , Shengjiao Zhang , Zhiqian Wu , Wenli Xu , Yanghua Lu , Sen Xu

Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and…

Vertically stacked heterojunctions have garnered significant attention for their tunable electronic structures and photocatalytic performance, making them promising candidates for next-generation nanodevices. Using first-principles…

材料科学 · 物理学 2025-07-18 Liuzhu Yang , Wenhui Wan , Zhicui Wang , Qiuyue Ma , Yanfeng Ge , Yong Liu

Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the…

材料科学 · 物理学 2017-07-21 Ying Jia , Teodor K. Stanev , Erik J. Lenferink , Nathaniel P. Stern

Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such…

材料科学 · 物理学 2015-06-23 A. T. Hanbicki , M. Currie , G. Kioseoglou , A. L. Friedman , B. T. Jonker

Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer…

In this report we review recent experimental results on photoexcited carrier relaxation dynamics on high temperature superconductors (HTSC) probed by a femtosecond time-resolved optical spectroscopy, and compare the results with the data…

超导电性 · 物理学 2015-06-24 Jure Demsar , Dragan Mihailovic , Viktor V. Kabanov

Carrier transport in nanodevices plays a crucial role in determining their functionality. In the post-Moore era, the behavior of carriers near surface or interface domains the function of the whole devices. However, the femtosecond dynamics…

介观与纳米尺度物理 · 物理学 2024-03-19 Yangguang Zhong , Shuai Yue , Huawei Liu , Yuexing Xia , Anlian Pan , Shula Chen , Xinfeng Liu

The study of Berezinskii-Kosterlitz-Thouless transitions in clean, layered two-dimensional superconductors promises to provide insight into a host of novel phenomena like re-entrant vortex-dynamics, underlying unconventional metallic…

超导电性 · 物理学 2023-01-10 Prakiran Baidya , Vivas Bagwe , Pratap Raychaudhuri , Aveek Bid

Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

Using heterodyne transient grating spectroscopy, we observe a significant enhancement of exciton diffusion within a monolayer WSe$_2$ stacked on top of graphene. We further demonstrate that the diffusion dynamics can be optically tuned on…

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Understanding the electronic coupling and energy flow across layered two-dimensional heterostructures (HSs) is crucial to the exploitation of carrier and phonon transports as well as thermal management in next-generation optoelectronic…

介观与纳米尺度物理 · 物理学 2026-05-29 Md. Shaikot Alam Shakil , Ting-Hsuan Wu , Xing He , Abu Montakim Tareq , Zhenjia Zhou , Libo Gao , Naihao Chiang , Ding-Shyue Yang

Two dimensional transition metal dichalcogenides exhibit strong excitonic responses, direct bandgaps, and remarkable nonlinear optical properties, making them highly attractive for integrated photonic, optoelectronic, and quantum…

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…