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We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…

材料科学 · 物理学 2016-10-19 Gionni Marchetti , Matthew Hodgson , James McHugh , Roy Chantrell , Irene D'Amico

The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…

统计力学 · 物理学 2011-12-20 Stefano Spezia , Dominique Persano Adorno , Nicola Pizzolato , Bernardo Spagnolo

We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the…

介观与纳米尺度物理 · 物理学 2015-05-19 Akashdeep Kamra , Bahniman Ghosh

We study the spin decoherence in n-type bulk GaAs for moderate electronic densities at room temperature using Ensemble Monte Carlo method. We demonstrate that the third-body rejection method devised by Ridley can be successfully adapted to…

材料科学 · 物理学 2015-06-23 Gionni Marchetti , Matthew Hodgson , Irene D'Amico

We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…

其他凝聚态物理 · 物理学 2012-06-19 Stefano Spezia , Dominique Persano Adorno , Nicola Pizzolato , Bernardo Spagnolo

The electron spin dynamics in an optically excited narrow quantum well is studied, where the electron spins precess in a k-dependent magnetic field while the electrons scatter at localized impurities. For the resulting spin decay, which is…

介观与纳米尺度物理 · 物理学 2017-05-31 Michael Cosacchi , Moritz Cygorek , Florian Ungar , Vollrath Martin Axt

We perform a study of the effect of the high in-plane electric field on the spin precession and spin dephasing due to the D'yakonov-Perel' mechanism in $n$-type GaAs (100) quantum wells by constructing and numerically solving the kinetic…

其他凝聚态物理 · 物理学 2007-05-23 M. Q. Weng , M. W. Wu , L. Jiang

We have set up a set of many-body kinetic Bloch equations with spacial inhomogeneity. We reexamined the widely adopted quasi-independent electron model and showed the inadequacy of this model in studying the spin transport. We further…

凝聚态物理 · 物理学 2009-11-07 M. Q. Weng , M. W. Wu

We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…

介观与纳米尺度物理 · 物理学 2009-10-06 M. M. Glazov , E. L. Ivchenko

The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron…

介观与纳米尺度物理 · 物理学 2018-08-15 S. Ullah , G. M. Gusev , A. K. Bakarov , F. G. G. Hernandez

We study the effect of charged impurity screening on spin decoherence in bulk {\it n}-type GaAs, and analyse in details the effect of the use of different Born approximations applied to a linearized Thomas-Fermi screening theory. The spin…

材料科学 · 物理学 2017-02-22 Gionni Marchetti , Irene D'Amico

We present an analytical study of the D'yakonov-Perel' spin relaxation time for degenerate electrons in a photo-excited electron-hole liquid in intrinsic semiconductors exhibiting a spin-split band structure. The D'yakonov-Perel' spin…

材料科学 · 物理学 2011-11-17 Matthew D. Mower , G. Vignale , I. V. Tokatly

The D'yakonov-Perel' mechanism of spin relaxation is connected with the spin splitting of the electron dispersion curve in crystals lacking a center of symmetry. In a two-dimensional noncentrosymmetric system, e.g. quantum well or…

介观与纳米尺度物理 · 物理学 2007-05-23 M. M. Glazov , E. L. Ivchenko

The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the…

介观与纳米尺度物理 · 物理学 2010-05-18 X. Li , E. A. Barry , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

We perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in n-typed GaAs (100) quantum wells for high temperatures ($\geq 120$ K) under moderate magnetic fields in the Voigt configuration by constructing and…

凝聚态物理 · 物理学 2007-05-23 M. Q. Weng , M. W. Wu

The spin diffusion/transport in $n$-type (001) GaAs quantum well at high temperatures ($\ge120$ K) is studied by setting up and numerically solving the kinetic spin Bloch equations together with the Poisson equation self-consistently. All…

材料科学 · 物理学 2007-05-23 J. L. Cheng , M. W. Wu

The changes of the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and…

统计力学 · 物理学 2015-06-03 Stefano Spezia , Dominique Persano Adorno , Nicola Pizzolato , Bernardo Spagnolo

Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi…

其他凝聚态物理 · 物理学 2008-03-11 W. J. H. Leylanda , R. T. Harley , M. Henini , A. J. Shields , I. Farrer , D. A. Ritchie

The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary…

介观与纳米尺度物理 · 物理学 2007-05-23 M. M. Glazov , E. L. Ivchenko , M. A. Brand , O. Z. Karimov , R. T. Harley

A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…

统计力学 · 物理学 2011-12-20 Stefano Spezia , Dominique Persano Adorno , Nicola Pizzolato , Bernardo Spagnolo
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