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相关论文: Ancilla wavefunctions of Mott insulator and pseudo…

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The Mott regime with finite $U$ offers a promising platform for exploring novel phases of matter, such as quantum spin liquids (QSL) that exhibit fractionalization and emergent gauge field. Here, we provide a new class wavefunction, dubbed…

强关联电子 · 物理学 2024-09-13 Boran Zhou , Hui-Ke Jin , Ya-Hui Zhang

We present a theoretical approach to describing the Mott transition of electrons on a two dimensional lattice that begins with the low energy effective theory of the Fermi liquid. The approach to the Mott transition must be characterized by…

强关联电子 · 物理学 2012-01-25 David F. Mross , T. Senthil

The physics of the Mott metal-insulator transition (MIT) has attracted huge interest in the last decades. However, despite broad efforts, some key theoretical predictions are still lacking experimental confirmation. In particular, it is not…

A new mean field theory is proposed for the Mott transition in the Hubbard model based on the slave rotor representation of the electron operator. This theory provides a better description of the role of the long range charge correlation in…

强关联电子 · 物理学 2016-01-12 Tao Li , Tomonori Shirakawa , Kazuhiro Seki , Seiji Yunoki

The Mott transition is usually considered as resulting from the divergence of the effective mass of the quasiparticle in the Fermi-liquid theory; the dispersion relation around the Fermi level is considered to become flat towards the Mott…

强关联电子 · 物理学 2020-10-26 Masanori Kohno

This article contains a theoretical overview of the physical properties of antiferromagnetic Mott insulators in spatial dimensions greater than one. Many such materials have been experimentally studied in the past decade and a half, and we…

强关联电子 · 物理学 2009-11-10 Subir Sachdev

We report on a phenomenological study of superfluid to Mott insulator transitions of bosons on the triangular lattice, focusing primarily on the interplay between Mott localization and geometrical charge frustration at 1/2-filling. A…

强关联电子 · 物理学 2009-11-11 A. A. Burkov , Leon Balents

Unique features of non-magnetic insulator phase are shown, and phase diagram for t-t' Hubbard model on square lattice is presented. Using the path-integral renormalization group method, we find antiferromagnetic phase for small next-nearest…

强关联电子 · 物理学 2007-05-23 Takahiro Mizusaki , Masatoshi Imada

The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…

强关联电子 · 物理学 2018-03-01 Tetsuya Furukawa , Kazuhiko Kobashi , Yosuke Kurosaki , Kazuya Miyagawa , Kazushi Kanoda

The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…

The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. The vicinity of the transition is believed to host exotic…

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

Based on a generalized one-band Hubbard model, we study magnetic properties of Mott insulating states for ultracold spin-3/2 fermionic atoms in optical lattices. When the \textit{s}-wave scattering lengths for the total spin $S=2,0$ satisfy…

强关联电子 · 物理学 2007-05-23 Hong-Hao Tu , Guang-Ming Zhang , Lu Yu

We investigate the metal-insulator transition driven by the onsite repulsive interaction $U$ in an altermagnetic Hubbard model defined on a Lieb lattice. Using the slave-rotor approach at half filling, we find that the system exhibits a…

强关联电子 · 物理学 2026-05-29 Vanuildo S. de Carvalho , Hermann Freire , Rodrigo G. Pereira

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

The Hubbard model at temperatures above the N\'{e}el transition, despite being a paramagnet, can exhibit rich physics due to the interplay of Fermi surface, on-site interaction $U$ and thermal fluctuations. Nevertheless, the understanding…

强关联电子 · 物理学 2025-01-23 Yu-Feng Song , Youjin Deng , Yuan-Yao He

Finding microscopic models for metallic states that exhibit quantum critical properties such as $\omega/T$ scaling is a major theoretical challenge. We calculate the local dynamical spin susceptibility $\chi(T,\omega)$ for a Hubbard model…

强关联电子 · 物理学 2017-04-07 Nagamalleswararao Dasari , N. S. Vidhyadhiraja , Mark Jarrell , Ross H. McKenzie

We introduce a novel extension of the Gutzwiller variational wavefunction able to deal with insulators that escape any mean-field like description, as for instance non-magnetic insulators. As an application, we study the Mott transition…

强关联电子 · 物理学 2009-11-13 Michele Fabrizio

Twisted transition metal dichalcogenides are a new platform for realizing strongly correlated physics with high tunability. Recent transport experiments [A. Ghiotto et al. Nature 597, 345 (2021)] have reported the bandwidth-driven evolution…

强关联电子 · 物理学 2026-01-08 Yong-Yue Zong , Zhao-Long Gu , Jian-Xin Li

A half-filled-band Hubbard model on an anisotropic triangular lattice (t in two bond directions and t' in the other) is studied using an optimization variational Monte Carlo method, to consider the Mott transition and superconductivity…

超导电性 · 物理学 2009-11-11 Tsutomu Watanabe , Hisatoshi Yokoyama , Yukio Tanaka , Jun-ichiro Inoue
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