相关论文: Ferroelectric MirrorBit-Integrated Field-Programma…
In this paper we present a comprehensive design and benchmarking study of Content Addressable Memory (CAM) at the 7nm technology node in the context of similarity search applications. We design CAM cells based on SRAM, spin-orbit torque,…
Computationally hard combinatorial optimization problems are pervasive in science and engineering, yet their NP-hard nature renders them increasingly inefficient to solve on conventional von Neumann architectures as problem size grows.…
As the amount of data produced in society continues to grow at an exponential rate, modern applications are incurring significant performance and energy penalties due to high data movement between the CPU and memory/storage. While…
This paper presents a low cost PMOS-based 8T (P-8T) SRAM Compute-In-Memory (CIM) architecture that efficiently per-forms the multiply-accumulate (MAC) operations between 4-bit input activations and 8-bit weights. First, bit-line (BL)…
We propose a novel topological photonic memory that encodes information through dynamically controllable Chern numbers in a two-band topological photonic system. Utilizing a honeycomb lattice photonic crystal, the memory leverages…
Natural spatiotemporal processes can be highly non-stationary in many ways, e.g. the low-level non-stationarity such as spatial correlations or temporal dependencies of local pixel values; and the high-level variations such as the…
Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures…
In this paper, we propose a new event memory architecture (MemNet) for recurrent neural networks, which is universal for different types of time series data such as scalar, multivariate or symbolic. Unlike other external neural memory…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann…
In-memory computing (IMC) is an effectual solution for energy-efficient artificial intelligence applications. Analog IMC amortizes the power consumption of multiple sensing amplifiers with analog-to-digital converter (ADC), and…
In this paper we present a synaptic array that uses dynamical states to implement an analog memory for energy-efficient training of machine learning (ML) systems. Each of the analog memory elements is a micro-dynamical system that is driven…
This paper reviews memory technologies used in Field-Programmable Gate Arrays (FPGAs) for neuromorphic computing, a brain-inspired approach transforming artificial intelligence with improved efficiency and performance. It focuses on the…
To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient (UFEE) baseband processors. Traditional…
Ultra-fast \& low-power superconductor single-flux-quantum (SFQ)-based CNN systolic accelerators are built to enhance the CNN inference throughput. However, shift-register (SHIFT)-based scratchpad memory (SPM) arrays prevent a SFQ CNN…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Traditional DRAM-based main memory systems face several challenges with memory refresh overhead, high latency, and low throughput as the industry moves towards smaller DRAM cells. These issues have been exacerbated by the emergence of…
In-memory analog matrix computing (AMC) with resistive random-access memory (RRAM) represents a highly promising solution that solves matrix problems in one step. However, the existing AMC circuits each have a specific connection topology…
Nowadays, we are witnessing an Artificial Intelligence revolution that dominates the technology landscape in various application domains, such as healthcare, robotics, automotive, security, and defense. Massive-scale AI models, which mimic…