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In-memory computing is a promising alternative to traditional computer designs, as it helps overcome performance limits caused by the separation of memory and processing units. However, many current approaches struggle with unreliable…

Brain-inspired hyperdimensional computing (HDC) is continuously gaining remarkable attention. It is a promising alternative to traditional machine-learning approaches due to its ability to learn from little data, lightweight implementation,…

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…

The T centre, a silicon-native spin-photon interface with telecommunications-band optical transitions and long-lived microwave qubits, offers an appealing new platform for both optical quantum memory and microwave to optical…

This paper presents an in-memory computing (IMC) architecture developed on an 8x8 array of 8T SRAM cells. This architecture enables both multi-bit parallel Multiply-Accumulate (MAC) operations and standard memory processing through…

Building upon previously introduced Bistable Vortex Memory (BVM) as a novel, nonvolatile, high-density, and scalable superconductor memory technology, this work presents a methodology that uses BVM arrays to address challenges in…

The huge amount of data produced in the fifth-generation (5G) networks not only brings new challenges to the reliability and efficiency of mobile devices but also drives rapid development of new storage techniques. With the benefits of fast…

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum…

With the rapid growth of deep neural networks (DNNs), compute-in-memory (CIM) has emerged as a promising energy-efficient paradigm for accelerating multiply-and-accumulate (MAC) operations. Yet, current CIM architectures are largely limited…

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…

Compute-in-memory (CiM) is a promising approach to improving the computing speed and energy efficiency in dataintensive applications. Beyond existing CiM techniques of bitwise logic-in-memory operations and dot product operations, this…

Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…

Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of their promising properties of near-zero leakage power consumption, high density and non-volatility. However, NVMs also face critical…

We have modified a commercial NOR flash memory array to enable high-precision tuning of individual floating-gate cells for analog computing applications. The modified array area per cell in a 180 nm process is about 1.5 um^2. While this…

Spin-Transfer Torque RAM (STTRAM) is an emerging Non-Volatile Memory (NVM) technology that provides better endurance, write energy and performance than traditional NVM technologies such as Flash. In embedded application such as…

To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient baseband processors. Traditional complementary…

More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…

An ultra fast bit addressing scheme for magnetic random access memories (MRAM) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by sub nanosecond field pulses making use of the…

The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…

The rapid advancement of neural network applications necessitates hardware that not only accelerates computation but also adapts efficiently to dynamic processing requirements. While processing-in-pixel has emerged as a promising solution…