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Lateral heterostructures built of monolayers of transition metal dichalcogenides (TMDs) are characterized by a thin 1D interface exhibiting a large energy offset. Recently, the formation of spatially separated charge-transfer (CT) excitons…

介观与纳米尺度物理 · 物理学 2025-09-03 Roberto Rosati , Sai Shradha , Julian Picker , Andrey Turchanin , Bernhard Urbaszek , Ermin Malic

Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and…

Semiconducting transition metal dichalcogenides (TMDs), such as MoSe$_2$ and WSe$_2$, exhibit unique optical and electronic properties. Vertical stacking of layers of one or more TMDs, to create heterostructures, has expanded the fields of…

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials…

The predicted formation of moire superlattices leading to confined excitonic states in heterostructures formed by stacking two lattice mismatched transition metal dichalcogenide (TMD) monolayers was recently experimentally confirmed. Such…

Ultrafast charge transfer processes provide a facile way to create interlayer excitons in directly contacted transition metal dichalcogenide (TMD) layers. More sophisticated heterostructures composed of TMD/hBN/TMD enable new ways to…

介观与纳米尺度物理 · 物理学 2023-01-12 Yoseob Yoon , Zuocheng Zhang , Ruishi Qi , Andrew Y. Joe , Renee Sailus , Kenji Watanabe , Takashi Taniguchi , Sefaattin Tongay , Feng Wang

Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we…

介观与纳米尺度物理 · 物理学 2021-11-16 Long Yuan , Biyuan Zheng , Qiuchen Zhao , Roman Kempt , Thomas Brumme , Agnieszka Beata Kuc , Chao Ma , Shibin Deng , Anlian Pan , Libai Huang

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into…

Moir\'e superlattices of transition-metal dichalcogenides (TMDs) host strongly interacting Bose-Fermi mixtures in which bosonic excitons coexist with correlated electron lattices. Using ultrafast, time- and energy-resolved photoluminescence…

Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices.…

Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies,…

介观与纳米尺度物理 · 物理学 2024-04-09 Lifu Zhang , Ruihao Ni , Liuxin Gu , Ming Xie , Suji Park , Houk Jang , Takashi Taniguchi , Kenji Watanabe , You Zhou

In order to fully exploit the potential of transition metal dichalcogenide monolayers (TMD-MLs), the well-controlled creation of atomically sharp lateral heterojunctions within these materials is highly desirable. A promising approach to…

介观与纳米尺度物理 · 物理学 2017-10-11 Sven Borghardt , Jhih-Sian Tu , Florian Winkler , Jürgen Schubert , Willi Zander , Kristján Lesson , Beata E. Kardynał

Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW)…

介观与纳米尺度物理 · 物理学 2020-08-04 Jaydeep Joshi , Tong Zhou , Sergiy Krylyuk , Albert V. Davydov , Igor Zutic , Patrick M. Vora

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thickness. Controlling their light emission electrically is a…

Exciton mobility in two-dimensional semiconductors is a key ingredient in materials-based design of optoelectronic functionalities. Monolayer transition metal dichalcogenides (TMDs) set a good test case, with tightly bound excitons and…

材料科学 · 物理学 2026-02-17 Amir Kleiner , Sivan Refaely-Abramson

Superconducting diodes that support nonreciprocal supercurrent flow in principle constitute attractive, non-dissipative, circuit elements for superconducting electronics. But their realization faces fundamental challenges, as conventional…

Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and solid state quantum simulators. While much progress has been made…

Charge separated interlayer excitons in transition metal dichalcogenide (TMDC) heterobilayers are being explored for moir\'e exciton lattices and exciton condensates. The presence of permanent dipole moments and the poorly screened Coulomb…

介观与纳米尺度物理 · 物理学 2021-03-17 Jue Wang , Qianhui Shi , En-Min Shih , Lin Zhou , Wenjing Wu , Yusong Bai , Daniel A. Rhodes , Katayun Barmak , James Hone , Cory R. Dean , X. -Y. Zhu

Transition metal dichalcogenides (TMDs) are known to support complex excitonic states. Revealing the differences in relaxation dynamics among different excitonic species and elucidating the transition dynamics between them may provide…

介观与纳米尺度物理 · 物理学 2021-04-07 Anran Wang , Yuhan Wang , Jianfei Li , Ning Xu , Songlin Li , Xinran Wang , Yi Shi , Fengqiu Wang

Monolayer transition metal dichalcogenide (TMD) semiconductors such as MoSe$_2$ host strongly bound excitons which are known to exhibit a strong resonant third-order nonlinear response. Although there have been numerous studies of the…

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