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相关论文: All-Optical Ultrafast Valley Switching in Two-Dime…

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Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. While extrinsic mechanisms can in general be…

材料科学 · 物理学 2019-05-30 Thibault Sohier , Marco Gibertini , Davide Campi , Giovanni Pizzi , Nicola Marzari

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring…

介观与纳米尺度物理 · 物理学 2015-07-30 Hongyi Yu , Xiaodong Cui , Xiaodong Xu , Wang Yao

Producing currents predominantly from a single valley, namely valley-polarized currents, at optical-cycle timescales is an important aspect of the petahertz valleytronics, yet it remains less developed. This work exhibits the feasibility of…

光学 · 物理学 2025-03-13 Wenqing Li , Xiaosong Zhu , Liang Li , Wanzhu He , Jie Long , Pengfei Lan , Peixiang Lu

In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic…

Breaking space-time symmetries in two-dimensional crystals (2D) can dramatically influence their macroscopic electronic properties. Monolayer transition-metal dichalcogenides (TMDs) are prime examples where the intrinsically broken crystal…

介观与纳米尺度物理 · 物理学 2015-09-04 Edbert J. Sie , James W. McIver , Yi-Hsien Lee , Liang Fu , Jing Kong , Nuh Gedik

In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($\sigma^+$ or $\sigma^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations.…

介观与纳米尺度物理 · 物理学 2016-05-25 T. Smoleński , M. Goryca , M. Koperski , C. Faugeras , T. Kazimierczuk , K. Nogajewski , P. Kossacki , M. Potemski

Manipulation of intrinsic electron degrees of freedom, such as charge and spin, gives rise to electronics and spintronics, respectively. Electrons in monolayer materials with a honeycomb lattice structure, such as the Transition-Metal…

强关联电子 · 物理学 2018-11-27 E. C. Marino , Leandro O. Nascimento , Van Sérgio Alves , N. Menezes , C. Morais Smith

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…

介观与纳米尺度物理 · 物理学 2016-09-06 Oriol Lopez Sanchez , Dmitry Ovchinnikov , Shikhar Misra , Adrien Allain , Andras Kis

Modern light generation technology offers extraordinary capabilities for sculpting light pulses, with full control over individual electric field oscillations within each laser cycle. These capabilities are at the core of lightwave…

光学 · 物理学 2020-11-25 Á. Jiménez-Galán , R. E. F. Silva , O. Smirnova , M. Ivanov

The coupled spin-valley physics in transition metal dichalcogenides (TMDs) endows exciton states with valley degrees of freedom, making them promising for valleytronic applications in TMDs monolayers and/or their heterostructures. Although…

应用物理 · 物理学 2022-12-07 Yingying Chen , Zeyi Liu , Junchao Hu , Junze Li , Wendian Yao , Dehui Li

Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…

介观与纳米尺度物理 · 物理学 2018-09-12 C. W. J. Beenakker , N. V. Gnezdilov , E. Dresselhaus , V. P. Ostroukh , Y. Herasymenko , I. Adagideli , J. Tworzydlo

Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that…

介观与纳米尺度物理 · 物理学 2022-11-09 Feng-Wu Chen , Nin-Yuan Lue , Mei-Yin Chou , Yu-Shu G. Wu

Electrons in graphene, in addition to their spin, have two pseudospin degrees of freedom: sublattice and valley pseudospin. Valleytronics uses the valley degree of freedom as a carrier of information similar to the way spintronics uses…

介观与纳米尺度物理 · 物理学 2013-04-03 D. Moldovan , M. Ramezani Masir , L. Covaci , F. M. Peeters

Pure currents comprise the flow of a two state quantum freedom -- for example the electron spin -- in the absence of charge flow. Radically different from the charge currents that underpin present day electronics, in two dimensional…

介观与纳米尺度物理 · 物理学 2025-07-01 Deepika Gill , Sangeeta Sharma , Sam Shallcross

Valleytronics in 2D materials - primarily graphene and transition metal dichalcogenides is rooted in the existence of valley flavor but extends far out to the rich dimension of local physics, as reviewed, extensively studied and…

介观与纳米尺度物理 · 物理学 2022-10-06 Feng-Wu Chen , Zheng-Han Huang , Yu-Shu G. Wu

Optical properties of semiconducting monolayer transition metal dichalcogenides have received a lot of attention in recent years, following the discovery of the valley selective optical population of either $K_{+}$ or $ K_{-}$ valleys at…

其他凝聚态物理 · 物理学 2022-05-17 Andrey Geondzhian , Angel Rubio , Massimo Altarelli

Coherent control and manipulation of quantum degrees of freedom such as spins forms the basis of emerging quantum technologies. In this context, the robust valley degree of freedom and the associated valley pseudospin found in…

介观与纳米尺度物理 · 物理学 2022-11-17 Mandeep Khatoniar , Nicholas Yama , Areg Ghazaryan , Sriram Guddala , Pouyan Ghaemi , Kausik Majumdar , Vinod Menon

Two-dimensional materials that exhibit optically active spin and valley degrees of freedom represent one of the most fascinating -- and potentially most technologically useful -- platforms for the ultrafast interaction of light and matter.…

介观与纳米尺度物理 · 物理学 2026-04-14 Ruikai Wu , Deepika Gill , Sangeeta Sharma , Sam Shallcross

Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D…

Selective control over the emission pattern of valley-polarized excitons in monolayer transition metal dichalcogenides is crucial for developing novel valleytronic, quantum information, and optoelectronic devices. While significant progress…