相关论文: Stochastic p-Bits Based on Spin-Orbit Torque Magne…

Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…

Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The…

Probabilistic computers offer promising solutions for computationally hard problems in domains such as combinatorial optimization and machine learning. A key building block in these systems is the probabilistic bit (p-bit), which relies on…

Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…

Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…

Ongoing semiconductor scaling challenges and the rise of neuromorphic computing have sparked interest in exploring novel computing schemes to achieve higher power efficiency and computational capabilities. Probabilistic computing is one…

We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…

Superparamagnetic tunnel junctions (SMTJs) are promising sources of randomness for compact and energy efficient implementations of probabilistic computing techniques. Augmenting an SMTJ with electronic circuits, to convert the random…

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…

Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs…

We introduce the concept of a probabilistic or p-bit, intermediate between the standard bits of digital electronics and the emerging q-bits of quantum computing. We show that low barrier magnets or LBM's provide a natural physical…

We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…

The slowing down of Moore's Law has led to a crisis as the computing workloads of Artificial Intelligence (AI) algorithms continue skyrocketing. There is an urgent need for scalable and energy-efficient hardware catering to the unique…

Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we study…

Stochastic spiking neural networks based on nanoelectronic spin devices can be a possible pathway to achieving "brainlike" compact and energy-effcient cognitive intelligence. The computational model attempt to exploit the intrinsic device…

True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs)…

Stochastic magnetic tunnel junctions (s-MTJs) are core components for spintronics-based probabilistic computing (p-computing), a promising candidate for energy-efficient unconventional computing. To achieve reliable performance under…

Magnetic tunnel junctions (MTJ's) with low barrier magnets have been used to implement random number generators (RNG's) and it has recently been shown that such an MTJ connected to the drain of a conventional transistor provides a…

The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…