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相关论文: An Experimental Analysis of RowHammer in HBM2 DRAM…

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We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is…

密码学与安全 · 计算机科学 2023-02-06 Onur Mutlu , Ataberk Olgun , A. Giray Yağlıkçı

RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink.…

We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real…

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…

硬件体系结构 · 计算机科学 2020-06-01 Jeremie S. Kim , Minesh Patel , A. Giray Yaglikci , Hasan Hassan , Roknoddin Azizi , Lois Orosa , Onur Mutlu

Our ISCA 2014 paper provided the first scientific and detailed characterization, analysis, and real-system demonstration of what is now popularly known as the RowHammer phenomenon (or vulnerability) in modern commodity DRAM chips, which are…

密码学与安全 · 计算机科学 2023-06-29 Onur Mutlu

As memory scales down to smaller technology nodes, new failure mechanisms emerge that threaten its correct operation. If such failure mechanisms are not anticipated and corrected, they can not only degrade system reliability and…

分布式、并行与集群计算 · 计算机科学 2017-03-03 Onur Mutlu

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips,…

This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~\cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the…

密码学与安全 · 计算机科学 2019-04-23 Onur Mutlu , Jeremie S. Kim

As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA…

分布式、并行与集群计算 · 计算机科学 2016-03-03 Yoongu Kim , Ross Daly , Jeremie Kim , Chris Fallin , Ji Hye Lee , Donghyuk Lee , Chris Wilkerson , Konrad Lai , Onur Mutlu

Rowhammer is a read disturbance vulnerability in modern DRAM that causes bit-flips, compromising security and reliability. While extensively studied on Intel and AMD CPUs with DDR and LPDDR memories, its impact on GPUs using GDDR memories,…

密码学与安全 · 计算机科学 2025-07-14 Chris S. Lin , Joyce Qu , Gururaj Saileshwar

We will discuss the RowHammer problem in DRAM, which is a prime (and likely the first) example of how a circuit-level failure mechanism in Dynamic Random Access Memory (DRAM) can cause a practical and widespread system security…

密码学与安全 · 计算机科学 2019-03-28 Onur Mutlu

RowHammer stands out as a prominent example, potentially the pioneering one, showcasing how a failure mechanism at the circuit level can give rise to a significant and pervasive security vulnerability within systems. Prior research has…

密码学与安全 · 计算机科学 2024-04-30 Ranyang Zhou , Jacqueline T. Liu , Nakul Kochar , Sabbir Ahmed , Adnan Siraj Rakin , Shaahin Angizi

DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attackers leverage RowHammer bitflips in real systems to take over…

This paper challenges the existing victim-focused counter-based RowHammer detection mechanisms by experimentally demonstrating a novel multi-sided fault injection attack technique called Threshold Breaker. This mechanism can effectively…

硬件体系结构 · 计算机科学 2023-11-29 Ranyang Zhou , Jacqueline Liu , Sabbir Ahmed , Nakul Kochar , Adnan Siraj Rakin , Shaahin Angizi

Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM row (RowHammer) or keeping a DRAM row open for a long…

硬件体系结构 · 计算机科学 2025-04-28 Haocong Luo , İsmail Emir Yüksel , Ataberk Olgun , A. Giray Yağlıkçı , Onur Mutlu

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby…

The RowHammer vulnerability in DRAM is a critical threat to system security. To protect against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips rely on undocumented, proprietary, on-die mitigations, commonly known…

密码学与安全 · 计算机科学 2022-10-25 Hasan Hassan , Yahya Can Tugrul , Jeremie S. Kim , Victor van der Veen , Kaveh Razavi , Onur Mutlu

This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system…

硬件体系结构 · 计算机科学 2021-09-30 Jeremie S. Kim

DRAM is the primary technology used for main memory in modern systems. Unfortunately, as DRAM scales down to smaller technology nodes, it faces key challenges in both data integrity and latency, which strongly affect overall system…

硬件体系结构 · 计算机科学 2023-03-15 Hasan Hassan

Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowHammer. RowPress induces bitflips by keeping a DRAM row open…

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