相关论文: Superconductivity in hyperdoped Ge by molecular be…
Superconductivity in the cuprate superconductors and the Fe-based superconductors is realized by doping the parent compound with charge carriers, or by application of high pressure, to suppress the antiferromagnetic state. Such a rich phase…
We report molecular beam epitaxy growth of Sr-doped Bi$_2$Se$_3$ films on (111) BaF$_2$ substrate, aimed to realize unusual superconducting properties inherent to Sr$_x$Bi$_2$Se$_3$ single crystals. Despite wide range of the compositions,…
The theoretical approach proposed recently for description of redistribution of electronic charge in multilayered selectively doped systems is modified for a system with finite number of layers. A special attention is payed to the case of a…
Superconducting epitaxial films of Fe-based layered arsenide, Co-doped SrFe2As2, were grown at 700oC on mixed perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed-laser deposition. Both the epitaxial film and an…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
Gray tin, also known as {\alpha}-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispersion has been proved experimentally by angle resolved…
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…
Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical.…
Recent improvements in materials growth and fabrication techniques may finally allow for superconducting semiconductors to realize their potential. Here we build on a recent proposal to construct superconducting devices such as wires,…
The response of superconducting devices to electromagnetic radiation is a core concept implemented in diverse applications, ranging from the currently used voltage standard to single photon detectors in astronomy. Suprisingly, a…
Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the…
The iron-based superconductor Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$ is emerging as a key material for high magnetic field applications owing to the recent developments in superconducting wires and bulk permanent magnets. Epitaxial thin…
The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are…
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford…
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates were measured with a time-resolved reflectivity (TRR)…
We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent…
We present very low temperature Scanning Tunneling Microscopy and Spectroscopy (STM/S) measurements of a W based amorphous thin film grown with focused-ion-beam. In particular, we address the superconducting properties close to the border,…
A complete phase diagram and its corresponding physical properties are essential prerequisites to understand the underlying mechanism of iron based superconductivity. For the structurally simplest 11 (FeSeTe) system, earlier attempts using…
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices. The two major difficulties are growth of high…
The superconducting transition temperature, $T_{\rm{c}}$, of FeSe can be significantly enhanced several-fold by applying pressure, electron doping, intercalating spacing layer, and reducing dimensionality. Various ordered electronic phases,…